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  • 1995-1999  (251)
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  • 1
    Electronic Resource
    Electronic Resource
    Response to "Comment on ‘Two-dimensional solitary kinetic Alfvén waves and dipole vortex structures' " [Phys. Plasmas 4, 611 (1997)] (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 3447-3447 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872489
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  • 2
    Electronic Resource
    Electronic Resource
    Two-dimensional solitary kinetic Alfvén waves and dipole vortex structures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 611-617 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new type of density soliton, which we call "dipole density soliton,'' is discovered in data from the Freja satellite. Like the dip or hump density solitons that were recently discovered in the Freja data [D.-J. Wu, G.-L. Huang, and D.-Y. Wang, Phys. Plasmas 3, 2879 (1996)], the dipole density solitons are also associated with strong electric spikes (∼ a few 100 mV/m) and have a spatial scale length of a few 100 m. This indicates that the three types of density solitons (dip, hump, and dipole) probably have the same physical nature. In this paper, a two-dimensional solitary kinetic Alfvén wave (SKAW) model with a dipole vortex structure is proposed to account for the three kinds of density solitons (dip, hump, and dipole), in which the differences in their appearances can naturally be attributed to differences in the positions and directions at which the satellite crosses dipole vortex structures. Some features of this two-dimensional SKAW model are discussed, and the results are compared to the one-dimensional cases. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872181
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  • 3
    Electronic Resource
    Electronic Resource
    A low coherence "white light'' interferometric sensor for eye length measurement (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 5464-5468 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article discusses the use of low coherence interferometric techniques, employing the so-called "white light interferometer,'' for axial eye length measurement. This system utilizes two Michelson interferometers, each of which locates one of the surfaces of the eye, the cornea and the retina, respectively, and thus a simultaneous determination of the two surface positions of the eye gives the value of eye length. The experimental results carried out on a simulated eye are presented, showing that the proposed system is simple, easy to align, suitable for measuring different kinds of eyes, tolerant to transverse eye movement, and worth further exploration. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146070
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  • 4
    Electronic Resource
    Electronic Resource
    Directional Effects of CO .pi. Bonding in Group VIB Pentacarbonyl Amines (1995)
    s.l. : American Chemical Society
    Inorganic chemistry 34 (1995), S. 3241-3244 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic00116a016
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  • 5
    Electronic Resource
    Electronic Resource
    Observation of quantum confined Stark effect in InxGa1−xAs/GaAs single-quantum well by photoreflectance spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2117-2119 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoreflectance spectroscopy of the InxGa1−xAs/GaAs single-quantum well system has been measured at several reverse dc bias voltages. The spectrum can be divided into two parts by the photon energy; one belongs to the GaAs bulk transition and the other belongs to the InxGa1−xAs/GaAs quantum well transition. The GaAs transition has shown the Franz–Keldysh oscillations which can be used to deduce the strength of the electric field in the bulk GaAs. On the other hand, the InxGa1−xAs/GaAs quantum well transition has exhibited the quantum confined Stark effect; that is, the transition energy in the quantum well will be redshifted in the presence of an electric field. The field in the quantum well can be estimated from the amount of redshifting and it was found that the built-in field in the quantum well needs to be close to that of GaAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360191
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  • 6
    Electronic Resource
    Electronic Resource
    Determination of alloy composition in modulation doped AlxGa1−xAs/GaAs heterostructure (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 172-174 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have determined the alloy composition of modulation doped AlxGa1−xAs/GaAs heterostructure by Raman scattering and photoreflectance spectroscopy at room temperature. We also demonstrated that Franz-Keldysh oscillations in photoreflectance spectroscopy can be used to evaluate the band gap of semiconductor heterostructure. The band gap measured by Franz-Keldysh oscillations of photoreflectance spectrum is 1.865 eV. The alloy composition calculated from the band gap is 0.30. From the frequency positions of "GaAs-like'' and "AlAs-like'' phonon modes of the Raman scattering data, the value of the alloy composition was evaluated to be 0.29 which is in good agreement with the photoreflectance result. Both values also agree with the target composition in the molecular beam epitaxy growth and the target composition is equal to 0.30. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359364
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  • 7
    Electronic Resource
    Electronic Resource
    A study of Franz–Keldysh oscillations in the photo reflectance spectrum of the δ-doped GaAs film (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7183-7185 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Our photo reflectance (PR) spectroscopy measurements of the δ-doped GaAs film at 300 K reveal many Franz–Keldysh oscillations (FKOs) above the valence band edge, E0 and the spin-orbit split energy, E0+Δ0, which enables us to determine the electric field strength from periods of FKOs provided reduced masses of the electron and holes are known. The reduced masses can be determined unambiguously at E0+Δ0, but not at E0, at which the heavy- and light-hole transitions are degenerate. However, the ambiguity at E0 can be resolved by applying the fast Fourier transform to the PR spectrum to separate the contributions from the heavy and light holes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361433
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  • 8
    Electronic Resource
    Electronic Resource
    First principles determination of magnetocrystalline anisotropy for surfaces and interfaces using a torque method (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5827-5827 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Perpendicular magnetic alignment is vital for high density magneto-optical recording materials. Despite the tremendous theoretical/computional advances made during the last few decades, the determination of magnetocrystalline anistropy (MCA) from first principles still remains a great challenge for complex systems. We will describe our recently proposed torque method for the first principles determination of MCA. In the usual first principles methods, one calculates the band energies associated with two magnetization directions and substracts one from the other. Within this approach, one has the difficulty of getting rid of the random fluctuations arising from the two different Fermi surfaces due to different magnetization directions. We show that to accurately determine the spin-orbit induced uniaxial ansisotropy energy for surfaces/interfaces, calculation of the torque at a specific angle is sufficient and one avoids the complexities associated with two Fermi surfaces by employing the Feynman-Hellman theorem. In the k-space integrations, we used both linear and quadratic interpolation schemes and convergence is assured when these two schemes agree to the accuracy desired. Examples, including Fe and Co multilayer systems, will be presented to demonstrate the efficiency and precision of this method. Detailed comparisons with previously proposed state-tracing method by Wang et al. are also made and discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362200
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  • 9
    Electronic Resource
    Electronic Resource
    Pumping-beam-induced photovoltaic effect on the photoreflectance of a δ-doped GaAs film (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6980-6983 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoreflectance (PR) spectroscopy of a δ-doped GaAs film has been measured at 300 K. Results reveal many Franz–Keldysh oscillations (FKOs) above the band-gap energy, which will enable the electric-field strength to be determined from the periods of FKOs. Since the photovoltaic effect cannot be neglected in PR measurements when using light as both the pumping and probing beams, it is generally assumed that the modulation field δF is much smaller than the built-in field F so that the periods of the FKOs will not be affected by the pumping beam. However, the induced photovoltage can be over 2/3 of Fermi level at low temperatures and cannot be neglected even at room temperature. Hence, the finite value of δF needs to be taken into consideration. The effect of δF on the shapes of PR is discussed, and it is shown that the FKOs of PR oscillate at a frequency corresponding to F−δF/2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363771
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  • 10
    Electronic Resource
    Electronic Resource
    Study on symmetry forbidden transitions in an InxGa1−xAs/GaAs single quantum well by temperature dependence (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6500-6503 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoreflectance (PR) spectroscopy of the single quantum well InxGa1−xAs/GaAs system has been measured at various temperatures. The selection rules for the interband transitions are Δn=0, where n is the quantum number of the nth subband in the quantum well. The symmetry forbidden transitions (Δn≠0), such as 12H (where mnH denotes transition between the mth conduction to nth valence subband of heavy hole), were often observed in the experiments and it was attributed to the existence of the built-in electric field in the quantum well. In this work, we change the strength of the built-in electric field by varying the temperatures of the samples. By varying the temperatures of the samples, the strength of the field can be changed by the effect of photo-induced voltages. The measured ratios of the intensities of 12H to 11H transitions decrease as the temperatures are lowered. Therefore, the existence of the built-in electric field may account for the observations of the symmetry forbidden transition 12H in the experiments. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359058
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