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  • 1995-1999  (134)
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  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial growth of Gd silicides prepared by channeled ion implantation (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3103-3107 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A continuous buried GdSi1.7 layer is formed by channelled implantation of 90 keV Gd ions into Si(111). In the case of (001) oriented silicon substrates, the silicide film is formed on the silicon surface. Its worse crystalline quality is due to the epitaxy occurring relative to all four {111}Si planes resulting in a textured GdSi1.7 layer. Annealing at a temperature of ≥850 °C for 30 min results in the presence of only the orthorhombic GdSi2 phase on the silicon surface for both (111) and (001) silicon substrates. However, the precipitates embedded in the silicon substrate are still hexagonal GdSi1.7. The phase transformation temperature is higher for (111) than for (001) silicon. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364344
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  • 2
    Electronic Resource
    Electronic Resource
    Ion beam syntheses and microstructure studies of a new FeSi2 phase (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3306-3309 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Iron-silicide has been formed by ion implantation of iron into silicon (111). In the as-implanted sample, a new type of orthorhombic FeSi2 phase was found. Although the lattice parameters of the new phase are the same as those of the known semiconductor β-FeSi2, its point group and space group were different and determined to be mmm and Pbca, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363240
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  • 3
    Electronic Resource
    Electronic Resource
    Defect-enhanced electron field emission from chemical vapor deposited diamond (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2707-2711 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond samples with varying defect densities have been synthesized by chemical vapor deposition, and their field emission characteristics have been investigated. Vacuum electron field emission measurements indicate that the threshold electric field required to generate sufficient emission current densities for flat panel display applications ((approximately-greater-than)10 mA/cm2) can be significantly reduced when the diamond is grown so as to contain a substantial number of structural defects. The defective diamond has a Raman spectrum with a broadened peak at 1332 cm−1 with a full width at half maximum (FWHM) of 7–11 cm−1. We establish a strong correlation between the field required for emission and the FWHM of the diamond peak. The threshold fields are typically less than 50 V/μm and can reach as low as 30 V/μm for diamond with a FWHM greater than 8.5 cm−1. It is believed that the defects create additional energy bands within the band gap of diamond and thus contribute electrons for emission at low electric fields. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360066
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  • 4
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance in melt-spun Cu80Ni10Fe10 ribbons : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5599-5601 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetoresistance (MR) behavior in melt-spun ribbons of a Cu80Ni10Fe10 alloy has been studied. The rapid solidified ribbon, when properly heat treated for phase decomposition, exhibits giant magnetoresistance behavior with the MR values of 8.5% at room temperature and 29% at 4.2 K. The observed magnetoresistance in the alloy is attributed to spin-dependent scattering at the two-phase interface and in the ferromagnetic phase. The substantial increase in MR, as the temperature decreases from room temperature to 4.2 K, is most likely caused by the reduction of spin-flip scattering of conducting electrons in the paramagnetic regions as a result of magnetic transformation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362254
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  • 5
    Electronic Resource
    Electronic Resource
    Deep levels in nitrogen-implanted n-type GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4261-4263 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ti/n-GaAs Schottky barrier diodes were prepared on nitrogen-implanted n GaAs. The Schottky barrier height of the diodes was found to be 0.96 eV, 0.12 eV higher than that of the samples without N implantation. Four distinctive electron traps E1(0.111), E2(0.234), E3(0.415), and E4(0.669) and one hole trap, H(0.545), have been observed with deep level transient spectroscopy. Defect models of these deep levels are proposed and the role of H(0.545) in the Schottky barrier formation is also discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359889
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  • 6
    Electronic Resource
    Electronic Resource
    The multilayer-modified Stoney's formula for laminated polymer composites on a silicon substrate (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5474-5479 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermomechanical behavior of multilayer structures is a subject of perennial interest. Stoney's formula has long been one of the most important tools for understanding thermomechanical stress for single-layered structures like spin-coated polyimides or deposited metal thin film on substrates. In today's microelectronics, however, as multilayer substrates have become widely available, the "modified version" of Stoney's formula for multilayer applications is not only useful but necessary. While the majority of reports in the literature have focused on single-layer analysis, in this study, we examined an extended usage of Stoney's formula for multilayer analysis. A simple model, the multilayer-modified Stoney's formula, which predicts the stress contribution of each individual layer is proposed and verified through experiments and numerical analysis. Using various kinds of materials employed in a typical lamination-based multichip module technology, the thermomechanical behavior of the lamination-based multilayer substrates was measured by a laser profilometry during thermal cycling. The measured values were compared with calculated values using the multilayer-modified Stoney's formula. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371548
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  • 7
    Electronic Resource
    Electronic Resource
    Fe-Cr-N soft magnetic thin films : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4042-4044 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Soft magnetic properties of new Fe-Cr-N and Fe-Cr-Ta-N alloy films have been investigated. Thin films with compositions in the range of Fe-2∼8% Cr-0∼1% Ta-5∼15% N (in at. %) were prepared by reactive sputtering in a nitrogen-containing atmosphere. The films, most likely nanocrystalline, exhibit excellent soft magnetic properties in the as-deposited condition without any post heat treatment, e.g., Hc∼1–2 Oe (79.4–158.8 A/m) and 4πMs∼15–20 kG. The easy-axis M-H loop is square. The hard-axis loop is linear and closed, with the anisotropy field Ha=20–60 Oe (1.59–4.77 kA/m). The combination of high 4πMs and relatively high Ha in these films is conducive to the suppression of the undesirable ferromagnetic resonance (FMR) interference up to the GHz frequency range. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364872
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  • 8
    Electronic Resource
    Electronic Resource
    Heterojunctions of solid C70 and crystalline silicon: Rectifying properties and barrier heights (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1683-1685 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heterojunctions of solid C70 and n- or p-type crystalline Si have been made. Current–voltage measurements show that both C70/n-Si and C70/p-Si contacts are rectifying but their directions of rectification are opposite to each other. Thermal activation measurements at a fixed forward bias show an exponential dependence of current on the reciprocal of temperature, from which we determine the effective barrier height as 0.23 eV for C70/n-Si and 0.27 eV for C70/p-Si. Relative dielectric constant of solid C70 was determined to be 4.96 through the study of high-frequency capacitance–voltage characteristics for Ti/C70/p-Si structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115056
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  • 9
    Electronic Resource
    Electronic Resource
    Significantly enhanced creep resistance in low-melting-point solders through nanoscale oxide dispersions (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2290-2292 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanosized, nonreacting, and noncoarsening oxide dispersoids have been incorporated into solder alloys to create an improved solder structure with an ultrafine grain size of ∼2000–5000 Å and significantly enhanced mechanical properties. As much as three orders of magnitude reduction in the steady-state creep rate has been achieved. These solders also exhibit improved (4–5 times higher) tensile strength at low strain rates and improved ductility under high strain rate deformation. It is demonstrated that with a dispersion of TiO2 particles, the Pb–Sn eutectic solder with a low melting point of 183 °C can be made more creep resistant than the 80Au–20Sn eutectic solder with a much higher melting point of 278 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121800
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  • 10
    Electronic Resource
    Electronic Resource
    Rectification properties and interface states of heterojunctions between solid C60 and n-type GaAs (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3557-3559 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid C60/n-GaAs heterojunctions have been fabricated by deposition of solid C60 film on the (100)-oriented epitaxial n-type GaAs substrates and their electrical characteristics have been measured. The rectification ratio is greater than 106 at a bias of ±1 V. The current for a fixed forward bias is an exponential function of reciprocal temperature, from which the effective potential barrier height of the heterojunction is determined to be 0.58 eV. A trap with an energy level 0.35 eV below the conduction band of GaAs at the C60/GaAs interface has been observed by the deep level transient spectroscopy technique. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117244
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