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  • American Institute of Physics (AIP)  (2)
  • 1995-1999  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3082-3088 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present photoluminescence (PL), UV absorption, electroluminescence and x-ray reflectivity studies of self-assembled multilayer films containing alternate layers of conjugated copolymers, and nonconjugated insulating polymers. We show that the PL emission properties of these organic quantum wells can be "tuned'' by a proper choice of the conjugated copolymer and the thickness of the insulating layers. Particularly, some of the self-assembled ultrathin films containing thin (∼7 A(ring)) insulating polymeric layers exhibit a blue shift upon decreasing the thickness of the assembly. The PL shift is roughly proportional to 1/d2 where d is the thickness of the assembly, as expected for confined photogenerated electron-hole pair in an infinite square potential well. In contrast, the PL emission of similar assemblies but containing thick (∼40 A(ring)) insulating layers is independent of the assembly thickness and exhibit emission in the blue. This may suggest a strong spatial confinement. Light emitting diodes based on self-assembled multilayer films with improved efficiency and stability and with threshold voltage as low as 2.6 V could be fabricated. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2135-2137 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-electron transistor has been fabricated by an optical fabrication method. A small dot, a source and drain reservoir, and in-plane gates are all built from the two-dimensional electron gas of an n-type GaAs/AlGaAs heterostructure. Laser-written p-doped lines are used to define this dot with a diameter of about 70 nm and to insulate it from the in-plane gates. Tunnel junctions connect the dot with source and drain. The in-plane gates are used to tune the tunnel junctions and to change the electrostatic potential of the dot. A large charging energy of 5 meV and clear Coulomb-blockade oscillations are observed at helium temperature, due to a small dot capacitance of about 3×10−17 F. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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