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  • Springer  (39)
  • American Institute of Physics (AIP)  (23)
  • 2000-2004  (62)
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  • 1
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    Elicitor-like effects of low-energy ultrasound on plant ( Panax ginseng ) cells: induction of plant defense responses and secondary metabolite production (2002)
    Springer
    Details
    Publication Date: 2002-06-01
    Print ISSN: 0175-7598
    Electronic ISSN: 1432-0614
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Published by Springer
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    PAPER CURRENT
  • 2
    Electronic Resource
    Electronic Resource
    Picosecond large angle reorientation of the magnetization in Ni81Fe19 circular thin-film elements (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 278-286 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large angle picosecond reorientation of the magnetization has been studied in circular Ni81Fe19 thin-film elements of 30 μm diameter and 500 Å thickness by means of an optical pump–probe technique. The sample was pumped by an optically triggered magnetic field pulse and probed by a time resolved magneto-optical Kerr effect measurement. The temporal profile of the pulsed field and the in-plane uniaxial anisotropy of the element were first determined from measurements made in large static fields where the magnetization exhibited small amplitude ferromagnetic resonance oscillations. Measurements of large amplitude oscillations were then made in a smaller static field that was still larger than the in-plane uniaxial anisotropy field and sufficient to saturate the sample. Using the measured temporal profile of the pulsed field, the Landau–Lifshitz–Gilbert equation was used to model the motion of the magnetization as a coherent rotation process. The same values of the anisotropy and damping constants provided an adequate simulation of both the high and low field data. The magnetization was found to move through an angle of up to about 30° on subnanosecond time scales. The dependence of the reorientation upon the direction of the static applied field and observed deviations from the coherent precession model are discussed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421211
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  • 3
    Electronic Resource
    Electronic Resource
    Calculation of the ground state of shallow donors in GaAs1−xNx (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 789-791 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ground-state binding energy and the Bohr radius of shallow donors in GaAs1−xNx alloys are determined as a function of the nitrogen atomic fraction using variational principle calculations. The calculations show that the ground state is strongly affected by the N-induced changes of the conduction band structure and the possible increase of the dielectric constant. Most importantly, large effects are predicted for the case of a Coulomb potential screened by free charge carriers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1324999
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  • 4
    Electronic Resource
    Electronic Resource
    Formation of diluted III–V nitride thin films by N ion implantation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2227-2234 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diluted III–Nx–V1−x alloys were successfully synthesized by nitrogen implantation into GaAs, InP, and AlyGa1−yAs. In all three cases the fundamental band-gap energy for the ion beam synthesized III–Nx–V1−x alloys was found to decrease with increasing N implantation dose in a manner similar to that observed in epitaxially grown GaNxAs1−x and InNxP1−x alloys. In GaNxAs1−x the highest value of x (fraction of "active" substitutional N on As sublattice) achieved was 0.006. It was observed that NAs is thermally unstable at temperatures higher than 850 °C. The highest value of x achieved in InNxP1−x was higher, 0.012, and the NP was found to be stable to at least 850 °C. In addition, the N activation efficiency in implanted InNxP1−x was at least a factor of 2 higher than that in GaNxAs1−x under similar processing conditions. AlyGa1−yNxAs1−x had not been made previously by epitaxial techniques. N implantation was successful in producing AlyGa1−yNxAs1−x alloys. Notably, the band gap of these alloys remains direct, even above the value of y (y〉0.44) where the band gap of the host material is indirect. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388860
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  • 5
    Electronic Resource
    Electronic Resource
    High frequency impedance spectra on the chromium dioxide thin film (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7702-7704 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the study of high frequency magnetotransport properties of the chromium dioxide (CrO2) thin films, grown on Si substrate using chemical vapor deposition. The film exhibits a ferromagnetic transition with a Curie temperature near 390 K. The temperature dependent spontaneous magnetization follows Bloch's law. The impedance spectra, being analyzed based on the fundamental electrodynamics, are demonstrated to be in a low-loss dielectric limit along with the occurrence of dielectric relaxation and magnetization response. The specific features of impedance spectra, distinct from the usual metallic ferromagnet, are attributed to the half metallic nature of CrO2. The results explore the possibility for high frequency device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1358352
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  • 6
    Electronic Resource
    Electronic Resource
    Monodomain configurations due to bias effect in NiO/NiFe microstructures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4948-4950 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic domain configurations of microstructured permalloy exchange coupled by an antiferromagnetic (NiO) thin film is presented. NiO/NiFe bilayer micrometer array elements were fabricated using electron beam lithography through a lift-off technique. The magnetic force microscopy images of the elliptical and rectangular elements with various aspect ratios showed dipole-like magnetic domain structures. The bright/dark arc contrast associated with the magnetic pole strength was dependent on the anisotropic exchange field. Furthermore, the shape anisotropy can overwhelm anisotropic exchange in patterned elements with a high aspect ratio and thicker permalloy film. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373211
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  • 7
    Electronic Resource
    Electronic Resource
    Photoemission study of the effect of thermal annealing on Cs2O/Si(111) surfaces (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3787-3791 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Cs2O overlayers with different thickness were prepared by simultaneous oxygen–cesium adsorption on Si(111) at room temperature. Photoelectron spectroscopy and work-function measurements have been used to study the Cs2O/Si surfaces as a function of annealing temperature. The results show that the interaction of the Cs2O overlayer with the substrate is weak. The Cs2O species is sensitive to x-ray radiation, forming a new species on the top surface. The Cs2O/Si surfaces exhibit a negative electron affinity with a work-function value of 0.85±0.1 eV until the Cs2O species decomposes completely. After Cs2O disappears, both Cs–O and Si–O bonds are dominant on the surfaces with a work function of about 1.2 eV. For further annealing, the oxygen bonded to cesium gradually transfers to Si due to Cs desorption. The thickness of the SiO2 overlayer formed after Cs desorption is dependent on the mount of oxygen in the Cs2O overlayer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405133
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  • 8
    Electronic Resource
    Electronic Resource
    Enhanced photoemission of Ag–O–Cs composite thin films with an internal electric field (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2227-2231 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ag–O–Cs thin films with internal field-assisted structure were fabricated, and enhanced photoemission was observed when the internal electric field was applied to the thin films. The increase of photoelectronic quantum yield, corresponding to the applied 30 V bias, was about 15.7%, while the thin films were irradiated by the light with wavelength of 510 nm. From an analysis of the electric potential distribution in the Ag–O–Cs thin films with the applied internal electric field, it is found that the interfacial barrier between the Ag nanoparticles and the Cs2O matrix is decreased and the vacuum level at the surface is degraded. The calculated barrier curves for various applied biases are illustrated to show the thinning effect of internal electric field on the interfacial barrier width. The theoretical lowering of interfacial barrier height is obtained as 0.08 and 0.22 eV when the thin films are stimulated by applied bias of 1 and 30 V, respectively. Further, a group of formulas as well, based upon the electric potential distribution in the Ag–O–Cs thin films, is deduced to describe the relationship between the applied bias and the degradation of the surface vacuum level. The enhanced photoemission of Ag–O–Cs thin films is attributed to the field-induced variations in the energy band structure which are considered to result in the increased probabilities for the photoexcited electrons to travel through the interfacial barrier and escape into the vacuum. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1334372
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  • 9
    Electronic Resource
    Electronic Resource
    Magnetoresistance anomaly in DyFeCo thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7209-7211 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microstructured rare-earth–transition-metal DyFeCo films have been investigated using magnetoresistance and extraordinary Hall-effect measurements. The Hall loops reveal variation of coercive fields depending on the linewidth and the composition of the films. The magnetoresistance curves, with changes up to as high as 1.3%, show positive/negative magnetoresistance peaks centered on the coercive fields depending on the linewidth of the films only. The variation of the coercivity can be attributed to the magnetic moment canting between the Dy and FeCo subcomponents and the existence of the diverged magnetization on the edges, and the anomalous magnetoresistance peaks observed are discussed with the existing theories. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357116
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  • 10
    Electronic Resource
    Electronic Resource
    Conservative antiphase boundary in SrTiO3 films on LaAlO3 substrates with SrRuO3 buffer layers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5653-5656 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the microstructure of SrTiO3 films on LaAlO3 substrates with the SrRuO3 buffer layer using high-resolution transmission electron microscopy. While high density of defects due to lattice mismatch were found at the SrRuO3/LaAlO3 interface, no misfit dislocation was observed at the SrTiO3/SrRuO3 interface. The {111} stacking fault in the SrRuO3 buffer layer propagates into the SrTiO3 film, giving rise to a type of antiphase boundary on the {110} plane with a crystallographic shear vector of a/2〈001〉. The boundary is a conservative one which does not lead to any charge defects. A model based on dislocation interactions is proposed to explain the generation mechanism of the antiphase boundary. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367881
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