Electronic Resource
Springer
Czechoslovak journal of physics
23 (1973), S. 567-575
ISSN:
1572-9486
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract The far field intensity distribution of spontaneously light-emitting diodes with FABRY-PEROT structure and its dependence on different annealing processes during the diode preparation is studied. The electromagnetic field distribution in the far field is considered for a four-layer-stepdiscontinuity of the dielectric constant in a GaAs-(Ga,Al)As heterostructure diode. Even for a symmetrical dielectric constant “profile” the maximum luminescence intensity is not emitted necessarily in a plane normal to the light emitting surface of the diode. This “cross-eyedness” can be influenced by annealing. The changed far-field pattern can be evaluated if one knows the doping profile in the vicinity of the p-n junction and its changes during the annealing. Theoretical statements are in qualitative agreement with experimental results.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01593835
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