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  • 1
    Electronic Resource
    Electronic Resource
    Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3434-3436 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A way of analyzing the data in a variable stripe length method gain experiment is presented. We confirm that the stripe length dependence of the gain in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells is caused by the change of the chemical potential along the excited stripe due to the interaction of the carrier and photon densities, and the gain threshold density is estimated. A trial function assuming a Lorentzian line shape for the stripe length dependence of the gain is compared with the edge emission intensity as a function of the stripe length. This is found to fit very well with our data, even beyond the saturation region. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421094
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  • 2
    Electronic Resource
    Electronic Resource
    Quantum beats of free and bound excitons in GaN (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1097-1099 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present spectrally resolved and time-integrated four-wave mixing measurements at coherent dynamics of bound excitons in a high-quality GaN epilayer. Coherent excitation, with co-circular polarized light, of the neutral donor-bound excitons (D 0X) and A excitons (XA) results in quantum beats, corresponding to the energy splitting between D 0X and XA. The temperature-dependent dephasing rate is used to deduce the strength of the D 0X-acoustic–phonon interaction via the homogeneous linewidth. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1391411
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  • 3
    Electronic Resource
    Electronic Resource
    Intensity noise in quantum-dot laser diodes (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3577-3579 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present intensity noise studies of a self-organized InAs/GaAs quantum-dot laser. The noise power measured for the full emission spectrum was found to be smaller than that for separate longitudinal mode groups. This noise cancellation indicates that the intensity fluctuations of the mode groups were anticorrelated, with typical values of the normalized correlation coefficient of around −0.50. This surprisingly high value is not consistent with the model of the quantum-dot laser as an inhomogeneous ensemble of independent microlasers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1377045
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