ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The first commercially viable high voltage (〉600V) gallium nitride (GaN) Schottky barrierdevices are reported. Though GaN does not have any “micropipe” defects, which commonly exists inSiC material, defects like dislocations due to lattice mismatch hamper the material development ofGaN high power devices. Improvements in the nitride epitaxial film growth have led to significantreduction of conductive dislocations. Conductive Atomic Force Microscope (CAFM) analysis ofconductive dislocations shows only on the order of 103 cm-2 density of conductive dislocations, whichare believed to be responsible for the undesired leakage current. GaN diodes compare to SiC or Sidevices demonstrate a significant advantage in the thermal resistance. The insulating properties ofSapphire substrates allow fabrication of the devices in TO220 packages with insulating frame andthermal resistance better than 1.8ºC/W compare to 3ºC/W of SiC or Si devices with insulating frame.Performance of GaN, SiC and Si devices in the switch mode power supplies is compared
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1251.pdf
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