ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Anisotropic thermal etching of 4H-SiC {0001} and {11-20} substrates was studied in themixed gas of chlorine (Cl2) and oxygen (O2) over 900oC. Etch pits appeared only on the (0001) Si face.Etching rates depended on the temperature, O2/Cl2 ratio, and an etching direction on the substratesurfaces. When the mesa structure was formed by the selective etching method, sloped sidewalls wereobserved around the periphery of the mesa. The angle of sidewalls depended on the orientation ofsubstrates
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.659.pdf
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