Publication Date:
2013-09-11
Description:
Author(s): Hyung Joon Kim, Jiyeon Kim, Tai Hoon Kim, Woong-Jhae Lee, Byung-Gu Jeon, Ju-Young Park, Woo Seok Choi, Da Woon Jeong, Suk Ho Lee, Jaejun Yu, Tae Won Noh, and Kee Hoon Kim It was recently discovered that a transparent n -type (Ba,La)SnO 3 system has electrical mobility as high as 320 cm 2 V −1 s −1 at room temperature and superior thermal stability up to ∼500 °C. To understand comparatively the carrier-scattering mechanism in the doped BaSnO 3 , we investigate the physical p... [Phys. Rev. B 88, 125204] Published Tue Sep 10, 2013
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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