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  • 2010-2014  (508)
  • 1995-1999  (131)
  • 1985-1989  (26)
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  • 1
    Electronic Resource
    Electronic Resource
    Cluster approach to structure of surfaces and chemisorption (1988)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 92 (1988), S. 3024-3028 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100322a002
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  • 2
    Electronic Resource
    Electronic Resource
    A photoion–photoelectron coincidence study of Arn (n=2–4) (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 2995-3003 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Photoion–photoelectron coincidence (PIPECO) spectra for Ar+n (n=2–4) in the wavelength region of 750–875 A(ring) have been measured at different nozzle stagnation pressures. The ionization energies (IE) for the ground Ar+2[I(1/2)u] and Ar+3[I(1/2)u] states are determined to be 14.518±0.017 eV (854±1 A(ring)) and 14.350±0.033 eV (864±2 A(ring)), in agreement with the findings of previous photoionization experiments. The IE for Ar+2[II(1/2)u] is found to be (approximately-less-than)15.83 eV (783 A(ring)). The observation of the Ar+2[II(1/2)u] PIPECO band supports the interpretation that Ar+2[II(1/2)u] is metastable with a lifetime longer than 47 μs, a value in accord with the calculated radiative lifetime of 90.9 μs for the II(1/2)u →I(1/2)g transition. The PIPECO spectrum for Ar+2 is dominated by autoionization structure similar to that resolved in the photoionization efficiency spectrum for Ar+2, indicating that a significant fraction of electrons produced by these autoionizing states are slow electrons with near-zero kinetic energies. Evidence is found that metastable Ar+3 and Ar+4 ions formed by photoionization of Ar3 and Ar4 at energies above the Ar+2[I(1/2)u]+Ar(1S0) and Ar+3[I(1/2)u]+Ar(1S0) dissociation limits may live longer than 58 and 66 μs, respectively. We suggest that the formation of Ar+3 in metastable electronic states may be responsible for the long dissociation lifetimes of Ar+3 observed in this experiment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455901
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  • 3
    Electronic Resource
    Electronic Resource
    A photoion–photoelectron coincidence study of (CO)2 and (CO)3 (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 6026-6033 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photoion–photoelectron coincidence (PIPECO) spectra for (CO)+2 in the wavelength region of 620–990 A(ring) have been obtained at different nozzle stagnation pressures (P0). The ionization energy for (CO)2 to CO+(X˜)⋅CO is determined to be (approximately-less-than)12.73±0.05 eV (974±4 A(ring)), indicating that CO+(X˜)⋅CO is bound by more than 1.29 eV. The PIPECO measurements also provide evidence that CO+(A˜,B˜)⋅CO are bound with dissociation energies 〉0.3 eV. At P0≤200 Torr and a nozzle temperature (T) of 120 K, nozzle expansion conditions which minimize the formation of (CO)n (n≥3), the intensities for the CO+(A˜,B˜)⋅CO PIPECO bands are found to be negligibly small compared to that for the CO+(X˜)⋅CO PIPECO band. This observation supports the conclusion that the excited CO+(A˜,B˜)⋅CO ions are dissociative, with dissociation lifetimes〈42 μs. This conclusion is contrary to that of the preliminary study which is based on the PIPECO spectrum for (CO)+2 measured at P0=350 Torr and T=120 K. Assuming that the radiative lifetimes of CO+(A˜ or B˜) and CO+(A˜ or B˜)⋅CO are identical, we estimate that the dissociation lifetimes for CO+(A˜)⋅CO and CO+(B˜)⋅CO are (approximately-less-than)4 μs and (approximately-less-than)50 ns, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456368
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  • 4
    Electronic Resource
    Electronic Resource
    End station for polarization and excitation energy selective soft x-ray fluorescence spectroscopy : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1561-1563 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An end station for soft x-ray fluorescence spectroscopy has been constructed, which includes an experiment chamber, rotatable 90° under ultrahigh vacuum conditions around the incoming synchrotron radiation beam, which is provided with a high-resolution soft x-ray spectrometer. A manipulator allowing three axes of rotation, three directions of translation, as well as LN2 cooling and resistive heating is mounted to the chamber and serves as the sample holder. Samples can be transferred under vacuum between the experiment chamber and two other chambers, one for sample preparation and another for introducing new samples and for sample storage. The end station has been used at two different synchrotron radiation laboratories (beamline BW3) at HASYLAB in Hamburg and at ALS (beamline 7.0) in Berkeley. Polarization-dependent and angular resolved, selectively excited x-ray emission studies have been made on ordered as well as nonordered systems, e.g., high-Tc superconducting systems, diamond, fullerenes, and molecular ices. The experimental system will be presented along with some recent scientific results. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145908
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  • 5
    Electronic Resource
    Electronic Resource
    First results from the SpectroMicroscopy Beamline at the Advanced Light Source : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1342-1345 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The SpectroMicroscopy Facility at the Advanced Light Source is based on a high brightness, high-resolution beamline, and includes a collection of projects designed to exploit the unique characteristics of the soft x-ray beam. The beamline itself is comprised of a 5-m long, 5-cm-period undulator, a spherical-grating monochromator with water-cooled gratings. Adaptive optics refocus the monochromatic beam to two "microfocus'' experimental stations with spot sizes less than 50 μm diameter and a third "nanofocus'' station uses a zone-plate lens to further demagnify the microfocus spot. Experimental stations include an "ultraESCA'' spectrometer for small-area spectroscopy and photoelectron diffraction, a scanning transmission x-ray microscope, and photoelectron microscopes. Commissioning experiments of microscopic actinide photoemission, surface-core-level photoelectron diffraction, and high-resolution soft x-ray fluorescence demonstrate dramatic improvements in sensitivity due to the high brightness and small focus of the beamline. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145969
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  • 6
    Electronic Resource
    Electronic Resource
    Properties and chemical stability of hot-rolled Ag(7 at. % Cu)-sheathed Bi2Sr2Ca0.64Cu1.64Ox powder-in-tube tapes (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4596-4607 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi2Sr2Ca0.64Cu1.64Ox (nominally Bi2212) powders were fabricated into powder-in-tube Ag- and Ag(7 at. % Cu)-sheathed tapes by cold and hot rolling to investigate the effects of sheath composition and rolling conditions on their microstructural development and superconducting properties. Bi2212 tapes with Ag(Cu) sheaths exhibited improved grain alignment and interfacial uniformity, as well as enhanced formation of the Bi-free phase (≈Sr7.5Ca6.5Cu14Ox), relative to the Ag-sheathed specimens. The hot-rolled Ag(Cu)-sheathed tapes displayed superior critical current densities (Jc), where magnetization Jcm=1.5×106 (H(parallel)c) and 4.6×105 A/cm2 (H⊥c) at T=5 K, H=1 T. Correspondingly, these specimens had transport critical current densities (Jct) of 6.7×104 A/cm2 (H(parallel)c) and 5.4×104 A/cm2 (H⊥c) at T=4.2 K, H=0 T and 2.2×104 A/cm2 (H(parallel)c) and 3.0×104 A/cm2 (H⊥c) at T=4.2 K, H=14 T. The chemical stability of the Ag(Cu) sheath regions during the partial melting process was also studied. Rapid oxidation of copper produced Cu2O precipitates in the sheath at 885 °C, and subsequently a Cu2O-free zone developed near the core/sheath interface. A theoretical analysis of Cu2O precipitate formation and decomposition during thermal processing is presented. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359805
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  • 7
    Electronic Resource
    Electronic Resource
    Schottky contact and the thermal stability of Ni on n-type GaN (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1623-1627 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Schottky barrier height of Ni on n-GaN has been measured to be 0.56 and 0.66 eV by capacitance–voltage (C–V) and current–density–temperature (J–T) methods, respectively. Gallium nickel (Ga4Ni3) is formed as Ni is deposited on the GaN film, which affects the barrier height markedly. The thermal stability of Ni on GaN is also investigated by annealing these specimens at various temperatures. Specimen annealing at temperatures above 200 °C leads to the formation of nickel nitrides Ni3N and Ni4N at the interface of Ni and GaN. These interfacial compounds change the measured barrier height to 1.0 and 0.8 eV by C–V and J–T methods, respectively. Comparisons of Schottky characteristics of Ni with those of Pt, Pd, Au, and Ti are also discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363822
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  • 8
    Electronic Resource
    Electronic Resource
    A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 235-237 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ohmic contacts with low resistance are fabricated on n-type GaN films using Ti/Ag bilayer metallization. The GaN films are grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with Si as the dopant. Ohmic characteristics are studied for films with carrier concentration range from 1.5×1017 to 1.7×1019 cm−3. The lowest value for the specific contact resistivity of 6.5×10−5 Ω cm2 is obtained without annealing. The barrier height of Ti on GaN is calculated to be 0.067 eV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116471
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  • 9
    Electronic Resource
    Electronic Resource
    Study of Schottky barriers on n-type GaN grown by low-pressure metalorganic chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2657-2659 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky barriers on n-type GaN films grown by low-pressure metalorganic chemical vapor deposition are characterized and derived. A thin Pt or a Pd layer is deposited by electron-gun evaporation to form Schottky contacts in a vacuum below 1×10−6 Torr. The Schottky barrier heights of Pt on the n-GaN film are determined to be 1.04 and 1.03 eV by current–voltage (C–V) and current density–temperature (J–T) measurements, respectively. Also based on C–V and J–T measurements, the measured barrier height of Pd on n-GaN is 0.94 and 0.91 eV, respectively. Schottky characteristics of Pt and Pd observed in the experiment are compared with those of Au and Ti in previous reports. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114327
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  • 10
    Electronic Resource
    Electronic Resource
    Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1721-1723 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two different kinds of n-type GaN films were prepared by organometallic vapor phase epitaxy, one by using trimethylgallium (TMGa) and another by using triethylgallium (TEGa) as the alkyl source. Schottky diodes with well-behaved current–voltage and capacitance–voltage characteristics were fabricated. Deep-level transient spectroscopy studies were performed on these samples. Three distinct deep levels, labeled E1, E2, and E3, were measured in the film grown with TMGa, with an activation energy of 0.14, 0.49, and 1.63±0.3 eV, respectively. Only one level, E3, was observed in the film prepared with TEGa. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115028
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