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  • American Institute of Physics (AIP)  (5)
  • 2015-2019  (1)
  • 2000-2004  (1)
  • 1995-1999  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Effects of local ambient atmosphere on the stability of electroluminescent porous silicon diodes (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5936-5941 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, the influence of surrounding ambient atmosphere on the stability of electroluminescent (EL) porous Si (PS) diodes is examined. We have fabricated electroluminescent porous Si layers from anodic oxidation of (1) epitaxially grown p-type layers on n-type Si substrates; (2) n-type substrates with Au/Pd contacts; (3) p-type substrates with Au/Pd contacts. These structures are characterized using photoluminescence (PL), EL, and infrared (IR) spectroscopies, as well as scanning electron microscopy (SEM). In the case of the porous Si structures fabricated from p-n junctions, such structures yield orange emission with maxima near 620 nm upon the application of moderate applied voltages (3–7 V). For each type of diode, it is found that in strong oxidizing environments, EL intensity degrades completely within 30 min; in contrast, the integrated intensity remains essentially unchanged in the same time frame in the presence of a vigorous flow of inert gases such as nitrogen and argon. Infrared spectroscopic studies strongly suggest that electroluminescence degradation is related to porous silicon surface oxidation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359550
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Formation of rare-earth oxide doped silicon by spark processing (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3416-3418 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we report a method for the incorporation of rare-earth oxides onto silicon surfaces. This process uses a high-energy dc spark to convert salts of rare-earth ions such as europium and erbium to the corresponding oxide phase(s) with concomitant formation of a porous layer. Scanning electron micrographs of the silicon substrate show an irregular, pitted surface morphology for those areas exposed to spark processing. Photoluminescence, infrared spectroscopy, and electron microscopy of the spark-processed regions of the Si substrate are clearly consistent with the formation of the desired luminescent oxide phase. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115778
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  • 3
    Electronic Resource
    Electronic Resource
    Low field magnetic resonance images of polarized noble gases obtained with a dc superconducting quantum interference device (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1908-1910 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a low transition temperature superconducting quantum interference device as a detector, we have obtained magnetic resonance images of laser-polarized 3He gas and solid 129Xe at 4.2 K in magnetic fields as low as 0.54 mT (3He) and 1 mT (129Xe), corresponding to Larmor frequencies of 17.6 and 11.8 kHz, respectively. The experimental resolution of the images is ∼500 μm for 3He in the gas phase and ∼950 μm for 129Xe in the solid state. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121223
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  • 4
    Electronic Resource
    Electronic Resource
    Size control of erbium-doped silicon nanocrystals (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1635-1637 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work describes the effects of pyrolysis oven length and erbium precursor on the preparation of discrete erbium-doped silicon nanoparticles. These doped nanoparticles were prepared by the co-pyrolysis of disilane and the volatile complex Er(tmhd)3 (tmhd=2,2,6,6-tetramethyl-3,5-heptanedionato). The particle sizes and size distributions were determined using high resolution and conventional transmission electron microscopy. Erbium-doped silicon nanoparticles exhibit a selected area electron diffraction pattern consistent with the diamond cubic phase and a distinctive dark contrast in the transmission electron microscope. The presence of erbium is confirmed by x-ray energy dispersive spectroscopy. In general, the mean diameter of the individual nanoparticles increases as the length of the pyrolysis oven used during their preparation is increased. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1309022
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  • 5
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    The importance of band tail recombination on current collection and open-circuit voltage in CZTSSe solar cells (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-07-12
    Description: Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells typically exhibit high short-circuit current density ( J sc ), but have reduced cell efficiencies relative to other thin film technologies due to a deficit in the open-circuit voltage ( V oc ) , which prevent these devices from becoming commercially competitive. Recent research has attributed the low V oc in CZTSSe devices to small scale disorder that creates band tail states within the absorber band gap, but the physical processes responsible for this V oc reduction have not been elucidated. In this paper, we show that carrier recombination through non-mobile band tail states has a strong voltage dependence and is a significant performance-limiting factor, and including these effects in simulation allows us to simultaneously explain the V oc deficit, reduced fill factor, and voltage-dependent quantum efficiency with a self-consistent set of material parameters. Comparisons of numerical simulations to measured data show that reasonable values for the band tail parameters (characteristic energy, capture rate) can account for the observed low V oc , high J sc , and voltage dependent collection efficiency. These results provide additional evidence that the presence of band tail states accounts for the low efficiencies of CZTSSe solar cells and further demonstrates that recombination through non-mobile band tail states is the dominant efficiency limiting mechanism.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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