ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Low-temperature epitaxial growth of 4H-SiC with CH3Cl carbon precursor was furtherdeveloped. In-situ doping with nitrogen and aluminum was investigated. The nitrogen concentrationin epitaxial layers grown on the C face was almost two orders of magnitude higher than that in theSi-face epilayers grown in the same growth run at 13000C. The opposite trend was observed forintentional aluminum doping, with more than an order of magnitude higher aluminum concentrationincorporated in Si-face epilayers. High values of nitrogen and aluminum doping well in excess of1020 cm-3 without any obvious epilayer morphology degradation can be achieved on C-face and Sifacerespectively. Addition of HCl during halo-carbon growth at 13000C resulted in drasticimprovement of the surface morphology. Also, a significant increase of the growth rate took placeconfirming that the improvement in the epilayer morphology during HCl-assisted growth ispredominantly related to silicon cluster etching by additional Cl-containing vapor species
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.133.pdf
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