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  • 1
    Electronic Resource
    Electronic Resource
    Magneto-optical characteristics of SiN/GdFe films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3744-3747 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magneto-optical and optical properties of GdFe single layer films, which are covered with a thin Si3N4 layer, were studied in the visible wavelength region. A Kerr rotation peak and a reflectivity drop were observed near 4.1 eV in GdFe alloyed films and attributed to the Gd element. Compared with the single thick GdFe film, the Kerr effect of SiN/GdFe bilayers was enhanced, due to the optical interference between Si3N4 and GdFe. The Kerr rotation of GdFe films showed a nonlinear function of the compositions in the whole measured wavelength range. Magneto-optical measurements directly evidence the spin–flip in the GdFe films as the Gd content increased from 20.7 to 24.2 at. %, which showed advantages over conventional magnetometry. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1336562
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  • 2
    Electronic Resource
    Electronic Resource
    Structural properties of the perovskite manganites (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 637-643 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural distortions arising from the condensations of two essential kinds of phonon modes: the triply degenerated rotational modes (cursive-phix,cursive-phiy,cursive-phiz) of MnO6 and the doubly degenerated Jahn–Teller (JT) active modes (Q1,Q2), have been systematically investigated in the perovskite manganites. The microstructure features of several typical structural phases have been characterized by transmission-electron microscopy investigations. Due to the strong coupling among crystal lattice, carriers, and spins, the condensations of the rotational modes evidently impact the fundamental behaviors of the low-temperature JT polarization and magnetic orders. In the A-type antiferromagnetic Pr(Sr)MnO3 and Nd(Sr)MnO3 materials, the properties of charge-ordering transitions and structural distortions have been extensively investigated. Several typical kinds of defect structures, including the antiphase boundaries and the 90°-twin domains in the charge-order states, have been analyzed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1379775
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of magnetic coupling on the magnetoresistive properties in La0.67Sr0.33MnO3/BaFe11.3(ZnSn)0.7O19 composites (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2924-2929 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The La0.67Sr0.33MnO3/BaFe11.3(ZnSn)0.7O19 (LSMO/BaM) composites have been prepared by cosintering the LSMO and the BaM powders. The microstructural, magnetic, and magnetoresistive (MR) properties of those systems were systematically studied. Due to the magnetic coupling between the LSMO (a soft magnet metal) and BaM (a hard magnet insulator) grains, the low-field MR sensitivity was reduced and the high-field MR slope was enhanced for the composites. In addition, an abnormal MR hysteresis (resistance reaches its maximum before field reversal) was identified for the composite when the field is applied vertical to the sample plane. Its origin was attributed to a coplay of the LSMO/BaM spin coupling and the demagnetization effect. Finally, an anisotropic magnetoresistance (AMR) effect was observed in the composites. The AMR value decreased with increasing the BaM content, which can be explained by the changes of the local effective field on the grain boundaries. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1392962
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  • 4
    Electronic Resource
    Electronic Resource
    Evolution of island–pit surface morphologies of InAs epilayers grown on GaAs (001) substrates (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3700-3705 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a study of the morphological evolution of InAs layers grown on GaAs (001) substrates by molecular-beam epitaxy under In-rich conditions. The surface morphology of the InAs layers is characterized by a feature of island–pit combinations. We show that the vertical sizes of the islands and pits can grow simultaneously beyond the average layer thickness, up to several hundred nanometers. The composition of the islands is found to be ternary InxGa1−xAs rather than the expected binary InAs due to intermixing of the layer and substrate materials. We determine that this intermixing is caused by dissociation of the exposed GaAs at the pits, followed by migration of excess Ga atoms and their incorporation into the islands. The density of the island–pit combinations keeps nearly constant for different layer thicknesses. Eventually, as the layer grows beyond a certain thickness, the pits are filled up by the expanding islands, forming a nearly pure island morphology at the growth front. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1354637
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of Fe doping on high field magnetoresistance and low field magnetoresistance at zero field in polycrystalline La0.7Sr0.3Mn1−xFexO3 (x=0–0.12) thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7410-7412 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline La0.7Sr0.3Mn1−xFexO3 thin films, with x=0–0.12, have been prepared on (001)-Si substrates using pulsed laser deposition. The films consist of fine grains with an average size of 60–80 nm. For those films, the metal–insulator transition temperature, Tp, is much lower than the Curie temperature, TC. The high field magnetoresistance, HFMR, is nearly temperature independent for x〈0.08, whereas the extrapolated low field magnetoresistance at zero field, LFMR*, decreases rapidly with increasing temperature. Moreover, Fe doping significantly decreases LFMR* and enhances HFMR at low temperatures. We propose that for the Fe-doped films, both the reduced spin polarization of conduction electrons and the increased spin-flip scattering are responsible for the decrease of LFMR*, while the weakened ferromagnetic spin interaction at the grain boundaries is responsible for the enhanced HFMR. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1358344
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  • 6
    Electronic Resource
    Electronic Resource
    Enhanced magnetoresistance in Ag-doped granular La2/3Sr1/3MnO3 thin films prepared by dual-beam pulsed-laser deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7428-7430 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we report our investigations on the doping effect metallic Ag on the intergrain magnetoresistance phenomenon. La2/3Sr1/3MnO3 (LSMO) thin films with Ag doping were prepared on (001) LaAlO3 at different substrate temperatures (Ts) by the dual-beam pulsed-laser deposition technique. Grown at Ts=750 °C, the films are perfectly epitaxial with their c axis perpendicular to the film surface. Ag dopant cannot substitute into the LSMO lattice, thus showing no obvious effect on the magnetotransport properties of the film, though it did impair the film in-plane epitaxy and improve the intergrain diffusion of the lattice atoms. However, grown at lower Ts(400 °C), the films are granular with c-axis texture. The Ag dopant exists at GBs and helps to increase the local Mn spin disorder at GBs and the phase interfaces, thus enhancing the eMR value by a factor of 2 compared with the undoped film. Experiment data also suggest that the transport mechanism underlying the Ag-doping enhanced eMR is spin-dependent scattering. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1362660
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  • 7
    Electronic Resource
    Electronic Resource
    Measurement of the energy decay rate for the first vibrational-excited-state in solid parahydrogen (2001)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 115 (2001), S. 930-932 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Energy decay rate of the first vibrational excited state for solid parahydrogen is measured from 4.8 K to 12 K. Measurements are carried out using the transient optothermal lensing spectroscopy with the vibrational excitations via the stimulated Raman scattering. The decay rate is measured to be 2.3×104 s−1 at 4.8 K, and it increases to 6.1×104 s−1 by raising the temperature to 12 K. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1379753
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  • 8
    Electronic Resource
    Electronic Resource
    Growth and deep ultraviolet picosecond time-resolved photoluminescence studies of AlN/GaN multiple quantum wells (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3690-3692 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlN/GaN multiple quantum wells (MQWs) with a well thickness of 26 Å have been grown by metal–organic chemical-vapor deposition. A specially designed photoluminescence (PL) spectroscopy system, which is capable of measuring picosecond time-resolved PL up to 6.2 eV, has been employed to probe the optical properties as well as the carrier transfer and decay dynamics in these MQWs. Optical transitions at 4.039 and 5.371 eV at T=10 K, resulting from the interband recombination between the electrons and holes in the n=1 and n=2 subbands in the wells, have been observed. The band-offset parameter for the AlN/GaN heterostructure has been obtained by comparing the experimental results with the calculations. Carrier dynamics including the relaxation of the electrons and holes from the n=2 and n=1 subband in the conduction and valence bands and the decay lifetimes of the interband transitions have also been measured and analyzed. Detailed subband structures for both the conduction and valence bands in the wells were determined. The implications of our findings on the potential applications of AlN/GaN quantum wells have been discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1377317
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  • 9
    Electronic Resource
    Electronic Resource
    Optical and electrical properties of Al-rich AlGaN alloys (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3245-3247 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlxGa1−xN alloys with x up to 0.7 were grown by metalorganic chemical vapor deposition and their optical properties were investigated by deep UV time-resolved photoluminescence (PL) spectroscopy. Our results revealed that both the activation energy of the PL emission intensity and the PL decay lifetime exhibit sharp increases at x of around 0.4. The results can be understood in terms of the sharp increase of the impurity binding energy or the carrier/exciton localization energy around x=0.4. A three orders of magnitude increase in resistivity of undoped AlGaN alloys at x of around 0.4 was also observed, which further corroborated the optical results. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418255
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  • 10
    Electronic Resource
    Electronic Resource
    III-nitride blue microdisplays (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1303-1305 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Prototype blue microdisplays have been fabricated from InGaN/GaN quantum wells. The device has a dimension of 0.5×0.5 mm2 and consists of 10×10 pixels 12 μm in diameter. Emission properties such as electroluminescence spectra, output power versus forward current (L–I) characteristic, viewing angle, and uniformity have been measured. Due to the unique properties of III-nitride wide-band-gap semiconductors, microdisplays fabricated from III nitrides can potentially provide unsurpassed performance, including high-brightness/resolution/contrast, high-temperature/high-power operation, high shock resistance, wide viewing angles, full-color spectrum capability, long life, high speed, and low-power consumption, thus providing an enhancement and benefit to the present capabilities of miniature display systems. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1351521
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