ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    The growth and characterization of ZnSe epilayers grown by VPE and MOCVD
    Amsterdam : Elsevier
    Progress In Crystal Growth And Characterization 17 (1988), S. 241-263 
    Details
    ISSN: 0146-3535
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0146-3535(88)90008-1
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    High-power, high-speed 1.3-μm semi-insulating-blocked distributed-feedback lasers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4785-4787 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a high-performance 1.3-μm InGaAsP/InP distributed feedback buried heterostructure laser which is compatible with all-vapor-phase growth technology. Current confinement is provided by metalorganic vapor-phase growth of semi-insulating InP blocking layers. The laser has a small-signal bandwidth of 12.5 GHz, a large signal digital capability at 16 Gb/s, and maintains single-frequency operation to output powers as high as 23 mW.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341201
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    The doping concentration dependence of zinc and tin in InGaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2211-2213 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In0.53Ga0.47As epitaxial layers doped with Zn and Sn were grown on InP (100) substrates by liquid-phase epitaxy with a 5 °C supersaturation temperature. The physical properties of the doped layers have been investigated. The peak energy of (D0,A0) pair band emission in Zn-doped InGaAs layers decreases with a linear slope of 0.7×10−8 eV cm as the cube root of net hole concentration is increased. In Sn-doped layers, the photoluminescent peak wavelength decreases with increasing electron concentration due to the Burstein–Moss shift and band-tailing effects. The relative peak intensity deteriorates in highly doped layers due to the formation of complex precipitates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342499
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Temperature-dependent electroluminescence in poly [2-methoxy-5(2′-ethylhexyloxy)-p-phenylenevinylene] light-emitting diode (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4019-4022 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature-dependent quantum efficiency in the device structure indium-tinoxide/[(2-methoxy-5(2′-ethylhexyloxy-)-p-phenylenevinylene)]/Ca/Al has been investigated over the temperature range from 20 to 296 K. A blueshift is observed in the electroluminescence spectra with an increasing temperature or voltage. From Fourier transform infrared spectra and UV-visible analyses have been observed that the conjugated length of the polymer chain decreases due to photo oxidation under UV component of sun light. The change in band gap resulting from the change in the conjugated length causes the observed blueshift. Quantum efficiency increases with decreasing temperature partly because of the enhancement of photoluminescence efficiency and partly because of the improved balance of holes and electrons. At a fixed temperature, an optimum voltage is required to obtain the maximum efficiency, and with increasing temperature, this voltage increases. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1336522
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Zinc doping in gallium antimonide grown by low-pressure metal-organic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 56-59 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zn-doped GaSb epilayers grown on GaAs and GaSb substrates by low-pressure metal-organic chemical vapor deposition were studied. Triethylgallium and trimethylantimony were used as Ga and Sb sources, respectively. The carrier concentrations of p-type GaSb epilayers were affected by V/III ratio and growth temperature. Diethylzinc(DEZn) was used as the p-type dopant. The relationship between carrier concentration P and mole fraction [DEZn] is P=K[DEZn]2.3. Photoluminescence for different carrier concentration was compared. There exist two different regions for the carrier concentration versus growth temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353829
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3317-3319 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work indium tin oxide (ITO) films were prepared using electron beam evaporation to form Schottky contacts on n-type GaN films. The thermal stability of ITO on n-type GaN was also investigated by annealing the samples at various temperatures. In addition, current–voltage (I–V) measurements were taken to deduce the Schottky barrier heights. Owing to the large series resistance, the Norde method was used to plot the F(V)–V curves and the effective Schottky barrier heights were determined as well. The effective Schottky barrier heights were 0.68, 0.88, 0.94, and 0.95 eV for nonannealed, 400, 500, and 600 °C annealed samples, respectively. Results presented herein indicate that an increase of the barrier heights may be attributed to the formation of an interfacial layer at the ITO/GaN interface after annealing. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121636
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Study on symmetry forbidden transitions in an InxGa1−xAs/GaAs single quantum well by temperature dependence (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6500-6503 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoreflectance (PR) spectroscopy of the single quantum well InxGa1−xAs/GaAs system has been measured at various temperatures. The selection rules for the interband transitions are Δn=0, where n is the quantum number of the nth subband in the quantum well. The symmetry forbidden transitions (Δn≠0), such as 12H (where mnH denotes transition between the mth conduction to nth valence subband of heavy hole), were often observed in the experiments and it was attributed to the existence of the built-in electric field in the quantum well. In this work, we change the strength of the built-in electric field by varying the temperatures of the samples. By varying the temperatures of the samples, the strength of the field can be changed by the effect of photo-induced voltages. The measured ratios of the intensities of 12H to 11H transitions decrease as the temperatures are lowered. Therefore, the existence of the built-in electric field may account for the observations of the symmetry forbidden transition 12H in the experiments. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359058
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    High quality undoped n-type GaSb epilayers by low-temperature metalorganic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2892-2895 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We obtain undoped n-type GaSb epilayers by low-temperature metalorganic chemical vapor deposition at a low growth temperature of 450 °C reproducibly. Different conduction types of GaSb and different energy levels are compared by photoluminescence spectra. For n-type undoped GaSb, the FWHM of dominant peak and bound exciton are 11 and 1.3 meV, respectively. Because semi-insulating GaSb substrates cannot be obtained, we cannot use the Hall effect to determine the carrier concentration and mobility of the homoepilayer. In order to identify the conduction types of GaSb, ohmic contact and Schottky barrier are made by Au/Ge/Ni and Au, respectively. The concentrations of undoped n-type GaSb homoepilayers obtained from I-V and C-V measurements are 1.44×1017–3.0×1017 cm−3, respectively. The mobility and concentration of undoped p-type GaSb heteroepilayers are 758 cm2/V s and 9.0×1015 cm−3 at 300 K, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354643
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Observation of quantum confined Stark effect in InxGa1−xAs/GaAs single-quantum well by photoreflectance spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2117-2119 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoreflectance spectroscopy of the InxGa1−xAs/GaAs single-quantum well system has been measured at several reverse dc bias voltages. The spectrum can be divided into two parts by the photon energy; one belongs to the GaAs bulk transition and the other belongs to the InxGa1−xAs/GaAs quantum well transition. The GaAs transition has shown the Franz–Keldysh oscillations which can be used to deduce the strength of the electric field in the bulk GaAs. On the other hand, the InxGa1−xAs/GaAs quantum well transition has exhibited the quantum confined Stark effect; that is, the transition energy in the quantum well will be redshifted in the presence of an electric field. The field in the quantum well can be estimated from the amount of redshifting and it was found that the built-in field in the quantum well needs to be close to that of GaAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360191
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Study of indium antimonide metal-oxide-semiconductor structure prepared by direct photochemical-vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4719-4723 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon dioxide (SiO2) insulator layers on indium antimonide (InSb) have been prepared by direct photochemical-vapor deposition at low temperature below 200 °C using 2537 A(ring) UV light. Ellipsometric studies prove that the refractive index and deposition rate of the photo-oxide films depend on the substrate temperature and gas ratio. The films evaluated by Auger electron spectroscopy (AES) depth profile showed that composition atoms were distributed uniformly throughout the oxide film. The AES analysis found the dominant components of the oxide film are silicon and oxygen. Fourier transform infrared spectroscopy absorption shows that the grown film has strong Si—O bonds with few Si—H bonds. The chemical x-ray photoelectron spectroscopy depth profile shows that the constituents of the semiconductors' outdiffusion into the oxide are few. Metal-oxide-semiconductor (MOS) capacitors were constructed on InSb substrates. Capacitance voltage (C-V) characteristics of the MOS capacitors were measured at 77 K. The interface-state density is of the order of 1011 cm−2 eV−1, and distributed in a very good U shape within the midgap. C-V curves showed almost no hysteresis and smaller flatband voltage. The current-voltage curve shows the leakage current is about 1 nA at 0.8 V, and the breakdown voltage is about 0.8 MV/cm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357265
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...