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  • 1
    Electronic Resource
    Electronic Resource
    Shubnikov–de Haas oscillations on as-grown and annealed molecular-beam-epitaxy-grown Hg1−xCdxTe alloys doped with indium (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 216-225 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transverse resistivity ρxx, longitudinal resistivity ρzz, and Hall resistivity ρxy on heavily indium-doped as-grown and annealed Hg1−xCdxTe (0.24〈x〈34) alloys in a magnetic field up to 12 T and temperature range 1.2–25 K have been measured. The as-grown and annealed samples show good quality Shubnikov–de Haas oscillations in which the effective masses m*, free-electron densities nSdH, and Dingle temperatures TD are extracted. The deduced m* and nSdH from the as-grown and annealed samples are in good agreement within 12%. However, there are considerable improvements in the low field Hall mobility μH (a maximum 54% increase) and a reduction in TD (a maximum 65% decline) in the annealed samples. Analysis at low field seems to indicate that broadening due to an inhomogeneous impurity distribution contributes to TD in addition to the partial cancellation produced by different frequencies of oscillations. An estimate of the average values of an electron density fluctuation Δn/n and its spatial extent ΔL based only on TD and Hall mobility temperature Tμ is presented. The deduced ΔL is in the order of mean free path l. This, therefore, can limit μH and the values of l and ΔL and this indicates that if there is an inhomogeneous distribution of indium donor, high-temperature annealing tends to homogenize the distribution of indium donors by diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353885
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  • 2
    Electronic Resource
    Electronic Resource
    Role of the crystallographic orientation on the incorporation of indium in HgCdTe epilayers grown by molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 954-956 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In-doped HgCdTe films have been grown by molecular beam epitaxy (MBE) on CdTe substrates in the (100) crystallographic orientation. They were characterized by Hall and secondary-ion mass spectroscopy measurements. The results are compared with those of In-doped HgCdTe layers grown in the (111)B orientation. In the (111)B orientation indium is incorporated in the metal site whereas in the (100) orientation it appears that indium is mainly incorporated interstitially. The results agree with a Te antisite model as a possibility for explaining the electrical behavior of (100) HgCdTe grown by MBE.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101734
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  • 3
    Electronic Resource
    Electronic Resource
    ZnSTe-based Schottky barrier ultraviolet detectors with nanosecond response time (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2251-2253 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSTe-based Schottky barrier photovoltaic detector arrays were fabricated on GaP(100) using a two-step molecular beam epitaxy growth approach. These detectors exhibit visible blind and ultraviolet (UV) sensitive response with a peak UV responsivity of 0.13 A/W and 1.2×106 V/W at 320 nm. The built-in potential of these detectors was determined to be 1.7 V. The temporal photocurrent response of a 400×400 μm2 detector was measured to be 1.2 ns, limited apparently by the resistance-capacitance (rc) constant of the detector structure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121692
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  • 4
    Electronic Resource
    Electronic Resource
    Atomic force microscopy studies of ZnSe self-organized dots fabricated on ZnS/GaP (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1340-1342 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe self-organized dot structures on ZnS thin films were fabricated by the molecular beam epitaxy technique. In situ reflection high-energy electron diffraction studies reveal that growth interruption is required for the formation of the dot structure. Atomic force microscopy (AFM) images of the dots taken within the same day of growth reveal that the dot density increases with increasing ZnSe coverage. A density of 18 μm−2 was achieved with a coverage of 8.0 ZnSe monolayers. AFM images taken at later times (up to six months later) show ripening effects. The average dot size measured at various times after growth is consistent with the prediction of the Ostwald ripening model with a growth time constant of 4±1 days for the structure with a coverage of 8.0 ZnSe monolayers. The dot size and density in the fully ripened state are essentially independent of the initial ZnSe coverage. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122156
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical determination of the valence-band discontinuity in HgTe-CdTe heterojunctions (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2230-2232 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current-voltage behavior is studied experimentally in a Hg0.78Cd0.22Te-CdTe-Hg0.78Cd0.22Te heterostructure grown by molecular beam epitaxy. At temperatures above 160 K, energy-band diagrams suggest that the dominant low-bias current is thermionic hole emission across the CdTe barrier layer. This interpretation yields a direct determination of 390±75 meV for the HgTe-CdTe valence-band discontinuity at 300 K. Similar analyses of current-voltage data taken at 190–300 K suggest that the valence-band offset decreases at low temperatures in this heterojunction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98949
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  • 6
    Electronic Resource
    Electronic Resource
    Shubnikov–de Haas oscillations on molecular-beam-epitaxy-grown Hg1−xCdxTe alloy doped with indium (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4326-4331 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shubnikov–de Haas oscillations on the transverse resistivity ρxx and longitudinal resistivity ρzz of as-grown indium-doped alloys of Hg1−xCdxTe (0.24〈x〈0.34) grown by molecular-beam epitaxy on (111)B and (100) growth directions are observed in the temperature range from 1.2 to 25 K and in fields up to 12 T. The n-type density from the periodicity, the effective mass m* from the temperature dependence of the amplitude, and the Dingle temperature TD are determined from ρxx and ρzz oscillations. The oscillations establish the high Hall density which is found at low fields. The TD in ρxx is found to be higher in comparison to TD in ρzz. However, this difference decreases as the Hall density increases. The TD discrepancy is probably due to greater inhomogeneity in the plane of the layer. The TD is higher than the temperature calculated from the weak-field Hall mobility. The density and effective mass are used to calculate the energy band gap, Fermi energy, and the band-edge effective mass. The calculated energy band gaps are in good agreement with the reported results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349112
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  • 7
    Electronic Resource
    Electronic Resource
    Molecular-beam-epitaxy-grown ZnMgS ultraviolet photodetectors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1811-1813 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of Zn1−xMgxS alloy thin films on GaP(100) substrates was carried out using the molecular-beam-epitaxy technique. In situ reflection high-energy electron diffraction studies show that the alloys can be grown with a stable zinc-blende structure up to x around 30%. For x〉30%, a structural transition will occur at a critical thickness which is sensitively dependent on the x composition. A near-band-edge peak with a full width at half maximum of about 10 nm was observed in room-temperature photoluminescence measurements made on as-grown alloy thin films. Several Zn1−xMgxS-based Schottky barrier photodetectors were fabricated. Room-temperature photoresponse measurements were performed on these detectors and abrupt long-wavelength cutoffs covering 325, 305, 295, and 270 nm were achieved for devices with Mg composition of 16%, 44%, 57%, and 75%, respectively. The response curve of the Zn0.43Mg0.57S device offers a close match to the erythemal action spectrum that describes human skin sensitivity to UV radiation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1358364
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  • 8
    Electronic Resource
    Electronic Resource
    Temperature dependence of the responsivity of II–VI ultraviolet photodiodes (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1098-1100 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature dependence, up to 150 °C, of the photoresponsivity of ZnS, ZnSTe, and ZnSSe photodiodes was investigated in this study. It was found that, in general, the responsivity at higher temperatures will shift to longer wavelengths because of band-gap narrowing. A remarkable observation is that the near-band-edge responsivities of these diodes increase at higher temperature. We believe that this observation is attributed to the change of the density-of-state distribution due to lattice expansion at high temperatures, and a simplified model is used to illustrate this hypothesis. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125950
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  • 9
    Electronic Resource
    Electronic Resource
    Photoresponse studies of ZnSSe visible–blind ultraviolet detectors: A comparison to ZnSTe detectors (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3707-3709 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work focuses on the investigation of the difference between the photoresponse of ZnS, ZnSSe, and that of ZnSTe Schottky-barrier photodiodes, with a particular aim to reveal the underlying causes of the gradual turn-on characteristic of low-Te-containing ZnSTe Schottky barrier photodiodes. To form the bottom electrode layer for the newly developed ZnSSe diode, n-type doping of ZnSSe by incorporating Al flux during molecular beam epitaxial growth was studied. Excellent-to-good dopant activation is achieved for Se composition up to 50%. The measured photoresponse of the diodes clearly indicates that the Te isoelectronic trapping effect is responsible for the gradual turn-on characteristic of low-Te-containing ZnSTe Schottky-barrier photodiodes. The results also reveal that the ZnSSe diode, having a much better visible rejection power, is a more suitable choice for high-performance visible–blind ultraviolet detection applications. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125436
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  • 10
    Electronic Resource
    Electronic Resource
    Direct observation of stacking fault nucleation in the early stage of ZnSe/GaAs pseudomorphic epitaxial layer growth (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2846-2848 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nucleation of stacking faults in the initial stage of growth of ZnSe/GaAs(001) epilayers has been studied by high-resolution transmission electron microscopy. Stacking faults have been observed to nucleate on the {111} planes on the slopes of ZnSe islands and hang over the adjacent (001) surface. The image details of a V-shaped fault originating from a sharp tip at a later stage of growth is in good agreement with the simulated image of stacking faults emerging from a dimer array of three chains. This gives support to residual dimer array on the 2×1 reconstructed (001) surface as the origin of stacking faults in ZnSe epilayers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1321732
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