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  • 1
    Electronic Resource
    Electronic Resource
    Evidence of the role of defects near the injecting interface in determining SiO2 breakdown (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2245-2247 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental results on oxide breakdown in thin insulator metal-oxide-semiconductor structures are presented to show that at a microscopic level breakdown is related to defects located near the injecting interface. In addition, breakdown is found to be almost independent of electron fluence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98925
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  • 2
    Electronic Resource
    Electronic Resource
    Transient current response in Pd-SiO2-Si structures during hydrogen absorption and desorption (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3931-3932 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient current measurements have been performed on Pd-gate metal-oxide-semiconductor capacitors at zero bias and room temperature, during hydrogen absorption and desorption. It is shown that a simple relationship among transient current, flat-band voltage, and time-dependent capacitance can fit the experimental data. Different possible origins of the transient current phenomenon are considered and discussed and the role played by the Na+ in delaying the transient current response is also illustrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335565
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  • 3
    Electronic Resource
    Electronic Resource
    Self-consistent solution of the Poisson and Schrödinger equations in accumulated semiconductor-insulator interfaces (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 337-345 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A general method for the study of quantum effects in accumulation layers is presented. The Schrödinger and Poisson equations are self-consistently solved in a finite quantum box which includes the whole metal-insulator-semiconductor structure. An appropriate choice of the boundary conditions allows the achievement of box-independent results. For the first time, the electrostatical potential and quantum energy levels of an accumulated n-type semiconductor are fully self-consistently calculated without considering the electric-quantum limit approximation. Hence, being able to treat the problem even at room temperature, we report results in the whole range from liquid-helium temperature to room temperature and beyond. This has been possible because our method allows the calculation of both bound and mobile electron states and their introduction into the Poisson equation on equal footing. The effect of the penetration of the wave functions into the oxide has been determined, and it has been demonstrated that the consideration of an infinite semiconductor-insulator interface barrier leads to more serious errors than previously estimated by other authors. Having included the oxide-metal interface into the quantum box, we also propose a simple method to calculate the tunnel current which flows through the insulator. Although the contribution of many subbands has to be added up to obtain the total current, oscillations in the Fowler–Nordheim current-voltage characteristic, which are due to reflection resonances at the insulator-anode interface, are clearly observed. Initially conceived for the accumulation layer problem, the presented method is obviously valid for treating inversion layers as well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350278
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  • 4
    Electronic Resource
    Electronic Resource
    Hot-electron-induced defects at the Si-SiO2 interface at high fields at 295 and 77 K (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2854-2859 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fowler–Nordheim tunneling electron injection is performed at 295 and 77 K in metal-oxide-semiconductor capacitors. In both cases the positive charge generated at the Si-SiO2 interface is found to be the "anomalous'' positive charge related to the slow states. At low temperature this charge is created at a faster rate than at 295 K for both positive and negative polarity. Its saturated density, on the contrary, strongly depends on the polarity of the applied bias voltage at low temperature, being much smaller during injection at positive bias. Fast and slow states appear only after the sample is heated to room temperature. While interband impact ionization is ruled out as a possible generation mechanism, the results are consistent with the idea that the hot injected electrons lose their energy at the anode-SiO2 interface by emitting an unidentified species which is responsible for the generation of the interfacial damage. A field- and temperature-activated migration of the positive defects from the sites of formation to the interface must occur before slow and fast states are observed. The correlation between slow states and hole traps is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335222
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  • 5
    Electronic Resource
    Electronic Resource
    Low-frequency noise in silicon-gate metal-oxide-silicon capacitors before oxide breakdown (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2167-2169 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the fluctuations in the tunneling current It through a thin SiO2 insulating layer, by means of an ultralow noise measurement set, showed that after a first time interval in which its power spectral density is stationary and proportional to I2t, an on-off modulation of It arises, just before oxide breakdown. This bistable noise seems to be related to localized phenomena controlled by trapping-detrapping processes within the oxide. Two possible mechanisms which could give rise to this bistable noise are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98930
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  • 6
    Electronic Resource
    Electronic Resource
    A many-band silicon model for hot-electron transport at high energies
    Amsterdam : Elsevier
    Solid State Electronics 32 (1989), S. 1663-1667 
    Details
    ISSN: 0038-1101
    Keywords: Conduction-Band Structure, Hot Electrons ; Device Simulation ; Distribution Function ; Electron Transport ; Monte Carlo Method ; Silicon
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1101(89)90291-8
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  • 7
    Electronic Resource
    Electronic Resource
    Fermi surface and charge density waves in niobium diselenide
    Amsterdam : Elsevier
    Solid State Communications 22 (1977), S. 331-333 
    Details
    ISSN: 0038-1098
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1098(77)91442-9
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  • 8
    Electronic Resource
    Electronic Resource
    Fault simulation for general FCMOS ICs (1991)
    Springer
    Journal of electronic testing 2 (1991), S. 181-190 
    Details
    ISSN: 1573-0727
    Keywords: bridging faults ; CMOS circuits ; critical path analysis ; fault simulation ; stuck-open faults
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Abstract This work presents a technique to correctly deal with non-stuck-at faults in FCMOS circuits making use of complex macrogates. This method can be applied to any gate-level fault simulator providing, for each line of the circuit, the observability status that is directly related to that of individual devices in the actual macrogate implementation. Conductance conflicts are correctly solved to detect bridgings and transistors stuck-on. Fault coverage results are presented and discussed for two typical FCMOS circuits. Results obtained on all ISCAS benchmarks show that the time required for the fault simulation of CMOS faults is comparable to that of stuck-ats.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00133502
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  • 9
    Electronic Resource
    Electronic Resource
    Design of CMOS checkers with improved testability of bridging and transistor stuck-on faults (1995)
    Springer
    Journal of electronic testing 6 (1995), S. 7-22 
    Details
    ISSN: 1573-0727
    Keywords: Bridging fault ; checker ; CMOS ; self-checking circuits ; testability
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Abstract This work presents a design technique for CMOS static and dynamic checkers (to be used in self-checking circuits), that allows the detection of all internal single transistor stuck-on and bridging faults causing unacceptable degradations of the circuit dynamic performance (but not logical errors). Such a technique exploits simple voltage detector circuits to make sure that the intermediate faulty voltages inevitably produced by the faults of interest are always propagated at the checker output as logic errors. With the use of our technique, the main disadvantages of static checkers, so far preventing their use in practical applications, are overcome. The method has been applied to the particular case of two-rail (static as well as dynamic) checkers and its validity has been verified by means of electrical level simulations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00993127
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  • 10
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    Resonant tunneling of holes in AlAs‐GaAs‐AlAs heterostructures (1985)
    American Institute of Physics
    Details
    Publication Date: 1985-08-15
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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