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  • 1
    Electronic Resource
    Electronic Resource
    Exciton photoluminescence linewidths in very narrow AlGaAs/GaAs and GaAs/InGaAs quantum wells (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6562-6564 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the low-temperature photoluminescence characteristics of very narrow one-dimensional quantum-well structures, grown by atmospheric pressure organometallic chemical vapor deposition, is presented. Theoretically predicted narrowing of photoluminescence peaks as quantum-well widths approach zero was experimentally observed in both AlGaAs/GaAs and strained GaAs/InGaAs samples. The role of such data in determining interface microstructure is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342027
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  • 2
    Electronic Resource
    Electronic Resource
    Tailoring of hole eigenenergies in strained GaAsP/AlGaAs single quantum wells grown by atmospheric pressure organometallic chemical vapor deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2501-2503 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we present experimental results demonstrating the effects of tensile strain on the ground-state hole eigenenergies of strained GaAsP/AlGaAs quantum wells (QWs) grown by organometallic chemical vapor deposition. Low-temperature photoluminescence (PL) spectra exhibit sharp, intense peaks corresponding to the n=1 heavy and light hole related QW transitions. The relative positions of the peaks depend on both the strain and the width of the QWs. In wider wells (120 A(ring)), the lowest energy, and dominant PL peak was assigned to the light hole, and for a 80 A(ring) well, the heavy and light hole peaks merged.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100224
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  • 3
    Electronic Resource
    Electronic Resource
    Pseudomorphic GaAs/InGaAs single quantum wells by atmospheric pressure organometallic chemical vapor deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 293-295 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality pseudomorphic GaAs/In0.12Ga0.88As single quantum wells (QW's) were prepared by atmospheric-pressure organometallic chemical vapor deposition. Photoluminesence spectra measured at 2.5 and 78 K exhibit intense, sharp peaks [full width at half-maximum (FWHM)=2.6 meV for a 17-A(ring) well at 78 K] from the quantized energy transitions of the QW's. Peak positions agree well with a square well calculation that includes the strain-induced band-gap shift in the In0.12Ga0.88As. Quite unlike previous work with QW's in which the FWHM was found to exponentially increase with decreasing well width, we observed a narrowing of the QW signals as the well width went below ∼30 A(ring). In larger well samples (300 A(ring)), the onset of surface crosshatch patterns was observed, which is expected from critical thickness theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99497
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  • 4
    Electronic Resource
    Electronic Resource
    Characteristic temperature study of GaAsP–AlGaAs tensile strained quantum well lasers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5400-5409 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature characteristics of tensile strained GaAs1−yPy–Al0.35Ga0.65As single quantum well heterostructure laser diodes are examined. The dependence of the characteristic temperature (T0) on the quantum well composition is systematically studied in broad-area stripe lasers with identical quantum well widths (115 Å) and various cavity lengths. Laser diodes with 10 quantum well compositions ranging from y=0 (lattice matched) to 0.30 (∼1.1% tensile strain) and 5 cavity lengths ranging from 300 to 1500 μm are examined. Characteristic temperatures are found to be maximized for small (but generally nonzero) quantum well phosphorus compositions, with a maximum value of T0=159 K obtained for y=0.025, but decrease rapidly with increasing composition. Our results are analyzed via a theoretical model for the characteristic temperature of the transparency current in separate confinement quantum well lasers and comparison of our observations with other measured laser characteristics. These analyses suggest that the observed local maximum in T0(y) at small y is a tensile strain effect, whereas the decreased T0(y) at large y results primarily from loss of carrier confinement and barrier recombination. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1314901
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  • 5
    Electronic Resource
    Electronic Resource
    Temperature stability of AlxGa1−xAs (0≤x≤1) thermal oxide masks for selective-area epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 922-925 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of thermal oxides of AlxGa1−xAs (0≤x≤1) as masking materials for selective-area epitaxy by organometallic chemical-vapor deposition has been investigated. It was found that the thermal oxide of GaAs is only applicable for low growth temperatures (≤600 °C), and the addition of aluminum significantly improves the thermal stability of the oxide. The oxide of Al0.4Ga0.6As is suitable for high-temperature deposition, but there are criteria for the thickness and oxidation temperature. Thin layers of AlAs oxidized at 475 °C are excellent masks and allow precise thickness control. Promising results of selective-area deposition using these aluminum oxide masks have been obtained. High-quality single crystal grew in mask openings uniformly surrounded by dense and fine-grain polycrystalline deposits, producing a planar duplication of the original pattern.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341894
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of polyimide passivation on the photoluminescence of high-purity epitaxial GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 962-964 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polyimide has been used as interlayer dielectric and passivation material. We studied the optical passivation property of polyimide by examining the spectral changes in the photoluminescence (PL) spectra of high-purity epitaxial GaAs coated with polyimide. Before full cure, the polyimide is nearly transparent to visible and near-infrared radiation. After full cure, the typical PL of GaAs was unobservable at liquid nitrogen or higher temperatures, but clear and distinct at liquid-helium temperature. The resolution of the GaAs exciton spectrum was improved in the coated sample. The polyimide-GaAs system also resulted in very weak luminescence extending over a wide spectral range from the red to near infrared.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340041
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence characteristics of selectively grown GaAs and AlGaAs/GaAs quantum wells (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2466-2469 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs and AlGaAs/GaAs multiple quantum wells (MQW) were selectively deposited on GaAs substrates patterned with native oxide, and photoluminescence (PL) characteristics of both the single crystal grown in open windows and the polycrystalline material deposited on the oxide masks were studied. Well-resolved distinct quantum-well (QW) transition peaks indicate no degradation of the epitaxial material quality in the small single-crystal areas. The PL of polycrystalline GaAs is very weak and the peak is centered around the near-band-edge transition energy of GaAs. Polycrystalline MQW structures exhibit much stronger PL signals, and the peak position shifts corresponding to the widths of the QWs grown. These results suggest that the quantum size effect is preserved in the polycrystalline material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339455
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  • 8
    Electronic Resource
    Electronic Resource
    AlGaAs/GaAs quantum wells with high carrier confinement and luminescence efficiencies by organometallic chemical vapor deposition (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 120-125 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single and multiple quantum wells with well widths ranging from 10 to 135 A(ring) were grown by atmospheric pressure organometallic chemical vapor deposition and characterized by photoluminescence (PL) and electrical measurements. Compared with single layers of high-purity GaAs and AlGaAs which have high intensity near band-edge excitonic transitions, the quantum well (QW) structures exhibit very strong luminescence of the discrete QW eigenstates. The intense QW signals indicate that the carrier confinement efficiency of the wells is very high, which is also supported by significant mobility enhancement in the samples. The sharp PL lines suggest high quality and smoothness of the well interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339170
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  • 9
    Electronic Resource
    Electronic Resource
    Slow relaxation and electric field quenching of persistent conductivity in GaAs metal-semiconductor field-effect transistors with different buffer layer structures (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2010-2012 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Slow relaxation in photoconductivity and high transverse field effects have been investigated in GaAs metal-semiconductor field-effect transistors with undoped GaAs buffers and AlGaAs/GaAs superlattice buffers. Persistent photoconductivity (PPC) has been observed in both types of devices at 77 K. Complete electric field quenching of the PPC is possible in devices with a GaAs buffer. A high electric field resulted in more profound effects on the channel conductance of the superlattice buffered devices. The barrier established by the superlattice precludes complete elimination of the PPC and thermal quenching is necessary.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98276
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  • 10
    Electronic Resource
    Electronic Resource
    In situ thermal oxidation for surface cleaning and mask generation prior to selective area epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2068-2070 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dry thermal oxidation of GaAs and AlAs has been carried out in an organometallic chemical vapor deposition system. This in situ process performed either before or after an epitaxial growth serves the purposes of surface cleaning and mask generation for selective area epitaxy of various III-V semiconductors. AlAs oxidized immediately after growth and patterned for the next regrowth provides better oxide-semiconductor interfaces and minimizes wafer handling. Pre-epitaxy oxidation at 435 °C on a patterned wafer with AlAs/GaAs areas resulted in a selective oxide mask. Since thermal oxides of GaAs sublime at temperatures 〉600 °C, a 700 °C pregrowth annealing thus thermally cleans the oxidized GaAs areas while the oxides of AlAs remain as a mask for the following regrowth. Photoluminescence results indicate that high quality regrown interfaces have been obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100321
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