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  • 1
    Electronic Resource
    Electronic Resource
    Low-temperature selective epitaxial growth of silicon at atmospheric pressure (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2689-2691 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Si has been grown selectively on oxide-patterned substrates from 850 down to 600 °C for the first time in the Si-Cl-H system at atmospheric pressure. Si deposition was achieved by hydrogen reduction of dichlorosilane in an ultraclean system using a load lock. Epitaxy was achieved at low temperatures only when the hydrogen was purified to remove traces of H2O and O2 implying that an oxygen-free environment is the most important factor controlling epitaxy at low temperatures. Cross-sectional transmission electron micrographs reveal perfect crystallinity in the epitaxial layer and a totally clean and featureless interface between epitaxy and substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101036
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  • 2
    Electronic Resource
    Electronic Resource
    Evidence of the role of defects near the injecting interface in determining SiO2 breakdown (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2245-2247 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental results on oxide breakdown in thin insulator metal-oxide-semiconductor structures are presented to show that at a microscopic level breakdown is related to defects located near the injecting interface. In addition, breakdown is found to be almost independent of electron fluence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98925
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  • 3
    Electronic Resource
    Electronic Resource
    Growth and properties of thin GaAs epitaxial layers on Al2O3 (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6497-6506 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The metalorganic vapor-phase epitaxy of GaAs on Al2O3 substrates was carried out over a growth temperature range of 600–800 °C. Several physical characterization techniques were used to obtain information on the initial stages of epitaxial growth and its influence on the physical properties of the epitaxial layer. The initial GaAs growth proceeds by island formation and coalescence, and the initial density of GaAs islands is a strong determinant of the epitaxial layer crystalline quality. An incommensurate growth model is presented to explain the dependence of the film properties on the growth parameters. The presence of defects in even very thick layers limits the applicability of these materials in device structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345125
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  • 4
    Electronic Resource
    Electronic Resource
    Reactions of Pd on (100) and (110) GaAs surfaces (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1519-1526 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reactions of Pd on atomically clean or air-exposed (100) and (110) GaAs surfaces at temperatures between 20 to 500 °C in different ambients were investigated by transmission electron microscopy. Interfacial reactions quite different from previous x-ray results were observed and two new Pd-Ga-As ternary phases were identified for the first time. At lower temperatures (T(approximately-less-than)250 °C) the formation of a ternary phase PdGa∼0.3As∼0.2, which has a hexagonal structure very similar to that of Pd2Ge or Pd2Si with a0=b0=0.672 nm and c0=0.340 nm, was observed. This ternary phase is epitaxially oriented with (12¯0)ternary(parallel)(100)GaAs and [001]ternary(parallel)[011]GaAs on (100) GaAs substrates, and with (11¯0)ternary(parallel)(110)GaAs and [001]ternary(parallel)[11¯0]GaAs on (110) GaAs substrates. At temperatures between 350 and 500 °C only one phase, PdGa, was observed to form in a high vacuum environment, whereas in a forming gas ambient, either a mixture of PdAs2 and another ternary phase PdGa∼0.6As∼0.4 (at 350 °C) or a mixture of PdAs2 and PdGa (at 500 °C) was observed. The ternary phase PdGa∼0.6As∼0.4 is also hexagonal in structure with a0=b0=0.947 nm and c0=0.374 nm. The PdGa phase formed at high temperature is epitaxially oriented on (100) substrates with (110) PdGa(parallel)(100)GaAs and [1¯11]PdGa(parallel)[011]GaAs, but is randomly oriented on (110) substrates. All these observations indicate that the Pd-GaAs reactions at T(approximately-greater-than)350 °C are very sensitive to the ambient conditions but not as sensitive to the GaAs surface cleanliness or substrate orientation. Correlation of these structural observations to ultraviolet and x-ray photoelectron spectroscopy data obtained from the same reacted interfaces are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336085
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  • 5
    Electronic Resource
    Electronic Resource
    Selective growth of silicon-germanium alloys by atmospheric-pressure chemical vapor deposition at low temperatures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1479-1481 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dichlorosilane and germane were used to grow silicon-germanium alloys at temperatures as low as 550 °C at atmospheric pressure. The silicon-germanium alloy composition was varied over the range 15%–44%. Films containing high Ge mole fractions were grown at a temperature of 625 °C and below and exhibit smooth surface morphology. Silicon-germanium/silicon multilayers with abrupt heterointerfaces have been achieved. Selective growth of silicon-germanium on oxide patterned silicon wafers was also demonstrated. A significant feature of the selective deposition is the lack of faceting at the oxide sidewall, which has been commonly observed in high-temperature silicon growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105293
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  • 6
    Electronic Resource
    Electronic Resource
    Silicon epitaxy from silane by atmospheric-pressure chemical vapor deposition at low temperatures (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1298-1300 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial silicon has been grown in an ultraclean system at atmospheric pressure and low temperatures (650–750 °C) using silane as a Si source in a He carrier gas. The depositions were nonselective (blanket) and demonstrate the broad capabilities of the low-temperature atmospheric-pressure growth apparatus that has previously been used for selective deposition of Si and SiGe from dichlorosilane (DCS) in H2. n-type doping using PH3 was also carried out and doping levels exceeding 1×1020/cm3 were obtained. However, abrupt doping pulses, as have been obtained for Si growth from DCS in the same temperature regime, were not achieved. In addition, PH3 was found to diminish the growth rate and degrade the crystal quality of the layers. The films grown from silane exhibited higher levels of oxygen at the interface between the epitaxial layer and the substrate than did films grown from DCS in the same temperature range. However, high quality films, free from extended defects, as determined by transmission electron microscopy (TEM), could still be achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107571
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  • 7
    Electronic Resource
    Electronic Resource
    High phosphorus doping of epitaxial silicon at low temperature and atmospheric pressure (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1896-1898 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High concentrations of electrically active phosphorus have been grown in Si epitaxial layers at 750 °C and below in an atmospheric pressure deposition system using PH3 and SiCl2H2 in H2. PH3 remarkably enhances the silicon deposition rate in the range 550–750 °C in contrast to previously reported doping studies using SiH4. Chemical concentrations as high as 2.5×1020 cm−3 with an electrical activity of 1×1020 cm−3 were obtained in layers that were free of defects by transmission electron microscopy. The doping level can be modulated between 1×1019 and 5×1016 cm−3 indicating that there are no complications due to dopant retention on sample or reactor wall surfaces. Emitter-base diodes formed in the epitaxial layers exhibited ideal forward and low-leakage reverse characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105066
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  • 8
    Electronic Resource
    Electronic Resource
    Strain relaxation and ordering in SiGe layers grown on (100), (111), and (110) Si surfaces by molecular-beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2242-2244 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si0.5Ge0.5/Si superlattices and thick Si0.5Ge0.5 layers grown on (100), (111), and (110) Si surfaces by molecular-beam epitaxy (MBE) exhibit different growth morphologies and defect structures. The best morphology is achieved on (100) surfaces at low temperatures (∼400 °C), while thin and defect-free SiGe layers grown at higher temperatures (∼600 °C) tend to exhibit undulated surfaces due to the mismatch strain. Strained SiGe layers grown on (111) and (110) surfaces are much more susceptible to twin formation. SiGe layers grown on (100) surfaces at low temperatures exhibit a long-range order along the 〈111〉 directions. Our results indicate that such ordering occurs only in thick and relaxed SiGe layers but not in thin SiGe layers strained in a SiGe/Si superlattice structure. No ordering was observed in SiGe layers grown on (111) and (110) surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106083
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  • 9
    Electronic Resource
    Electronic Resource
    Strain relaxation mechanisms of lead and lead alloy thin films on silicon substrates
    Amsterdam : Elsevier
    Thin Solid Films 89 (1982), S. 165-174 
    Details
    ISSN: 0040-6090
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0040-6090(82)90445-X
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  • 10
    Electronic Resource
    Electronic Resource
    Raman and infrared spectra of K2PtCl6:Ir4+ crystals (1976)
    Chichester [u.a.] : Wiley-Blackwell
    Journal of Raman Spectroscopy 4 (1976), S. 373-378 
    Details
    ISSN: 0377-0486
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: The low temperature Raman and far-infrared (IR) spectra of solution-grown crystals of K2PtCl6:Ir4+ have been studied. In addition to the strong absorptions of the host compound, a number of weak features were observed. The Raman band at 278 cm-1 has been assigned to ν2(Eg) of IrCl62-. An IR- and Raman-active band, observed at 236 cm-1 when K2IrBr6 was used as the dopant, has been assigned to ν(Pt-Br), A1g′ of [PtCl4Br2]2-. The symmetry of the host compound was lowered by the presence of the dopant ions, resulting in a splitting of some of the IR-active degenerate modes. Preliminary Raman experiments with K2PtCl6:Os4+ indicated that ν2 of OsCl62- was at 271 cm-1.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jrs.1250040404
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