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  • 1
    Electronic Resource
    Electronic Resource
    Blue LEDs, UV photodiodes and high-temperature rectifiers in 6H-SiC
    Amsterdam : Elsevier
    Physica B: Physics of Condensed Matter 185 (1993), S. 453-460 
    Details
    ISSN: 0921-4526
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4526(93)90277-D
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  • 2
    Electronic Resource
    Electronic Resource
    Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2672-2679 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality, monocrystalline 6H-SiC thin films have been epitaxially grown on 6H-SiC {0001} substrates which were prepared 3° off-axis from 〈0001〉 towards 〈112¯0〉 at 1773 K via chemical vapor deposition (CVD). Essentially, no defects were generated from the epilayer/substrate interface as determined by cross-sectional transmission electron microscopy (XTEM). Double positioning boundaries which were observed in β-SiC grown on 6H-SiC substrates were eliminated as confirmed by plan-view TEM. A strong dependence of the surface morphology of the as-grown thin films on the tilting orientation of the substrates was observed and reasons for this phenomenon are discussed. The unintentionally doped 6H-SiC thin films always exhibit n-type conduction with a carrier concentration on the order of 1016 cm−3. Au-6H-SiC Schottky barrier diodes were fabricated on the CVD 6H-SiC thin films and it was found that the leakage current at a reverse bias of 55 V was only 3.2×10−5 A/cm2. This is compared to SiC films grown on other substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341608
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  • 3
    Electronic Resource
    Electronic Resource
    High-temperature depletion-mode metal-oxide-semiconductor field-effect transistors in beta-SiC thin films (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2028-2030 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depletion-mode n-channel metal-oxide-semiconductor field-effect transistors were fabricated on n-type β-SiC (111) thin films epitaxially grown by chemical vapor deposition on the Si (0001) face of 6H α-SiC single crystals. The gate oxide was thermally grown on the SiC; the source and drain were doped n+ by N+ ion implantation at 823 K. Stable saturation and low subthreshold current were achieved at drain voltages exceeding 25 V. Transconductances as high as 11.9 mS/mm were achieved. Stable transistor action was observed at temperatures as high as 923 K, the highest temperature reported to date for a transistor in any material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98282
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  • 4
    Electronic Resource
    Electronic Resource
    The role of geometric considerations in the diamond-cubic boron nitride heteroepitaxial system (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2679-2681 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the methods and results of a theoretical study of the diamond-cubic boron nitride [BNcub] heteroepitaxial system. We introduce a general, geometric reciprocal space technique for evaluating candidate epitaxial configurations, and a novel system of essentially geometric criteria to order them from most to least likely to occur. In the diamond- BNcub system, it is found that low index like planes require a relatively small strain of 1.37% from bulk parameters. The unlike epitaxial configuration which pairs diamond{100} with BNcub{221} and yields two-dimensional coincidence with the same strain is favored above other low index mixed configurations. The essentially geometric nature of this epitaxial system is highlighted.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348663
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  • 5
    Electronic Resource
    Electronic Resource
    Hall measurements as a function of temperature on monocrystalline SiC thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6375-6381 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hall measurements were conducted at temperatures up to 1000 K on unintentionally doped n-type β(3C)- and α(6H)-SiC thin films epitaxially grown on both on-axis and vicinal Si (100) and α(6H)-SiC (0001) by chemical vapor deposition. The carrier concentration versus temperature data were analyzed using a compensation model. The β-SiC films grown on Si were highly compensated (NA/ND=0.73–0.98). The compensation ratio was not as large in the SiC films grown on α-SiC (NA/ND=0.36, for β-SiC on α-SiC, and 0.02, for α-SiC on α-SiC). The donor ionization energy for β-SiC on Si was calculated to be 14–21 meV. Analogous values for β- and α-SiC films on α-SiC were 33 and 84 meV, respectively. These values are smaller than those for N determined from photoluminescence studies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345159
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in β-SiC thin films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2168-2177 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both inversion- and depletion-mode n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated on β-SiC thin films grown by chemical-vapor deposition. The inversion-mode devices were made on in situ doped (Al) p-type β-SiC(100) thin films grown on Si(100) substrates. The depletion-mode MOSFETs were made on n-type β-SiC(111) thin films grown on the Si(0001) face of a 6H α-SiC substrates. Stable saturation and low subthreshold currents were achieved at drain-source voltages exceeding 5 and 25 V for the inversion-mode and depletion-mode devices, respectively. The transconductance increased with temperature up to 673 K for the short-gate-length devices, of either mode, and then decreased with further increases in temperature. It is proposed that the transconductances and threshold voltages for the inversion-mode devices are greatly affected by minority-carrier injection from the source. Stable transistor action was observed for both types of devices at temperatures up to 823 K, with the depletion-mode devices operating very well up to 923 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341731
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  • 7
    Electronic Resource
    Electronic Resource
    An examination of double positioning boundaries and interface misfit in beta-SiC films on alpha-SiC substrates (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2645-2650 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Beta-SiC thin films epitaxially grown on 6H-SiC (0001) substrates were examined via scanning-reflection x-ray topography (XRT) and x-ray rocking curve analysis. The lattice misfit between the (111) plane of the β-SiC epitaxial layer and the (0001) plane of the 6H-SiC substrate was determined to be 7.6×10−4. Boundaries separating regions of the β-SiC film rotated from each other by 60° were observed and identified by XRT as double positioning boundaries (DPBs), which are a special type of twin boundary. The XRT maps showed that the mosaic structure examined via optical microscopy was also caused by the DPBs. Finally, many stacking faults were generated at the boundaries as revealed by plan-view transmission electron microscopy, indicating the high internal energy of these DPBs. The formation mechanisms of the DPBs is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341004
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  • 8
    Electronic Resource
    Electronic Resource
    Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type β-SiC grown via chemical vapor deposition (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 442-444 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-semiconductor field-effect transistors (MESFET's) have been fabricated in an unintentionally doped, n-type β-SiC thin film grown by chemical vapor deposition (CVD). This n-type layer was deposited on a monocrystalline p-type β-SiC (100) CVD layer previously grown on a p-type Si (100) substrate. The buried p layer allowed the devices to be fabricated several microns away from the SiC/Si interface region which contained numerous defects formed as a result of the poor lattice match and different coefficients of thermal expansion between SiC and Si. Thermally evaporated Au was utilized for the gate contact. Sputtered TaSi2 was employed for the source and drain contacts. The gate lengths and channel depths of these MESFET's were 3.5 and 0.60 μm, respectively. Saturation of the drain currents was achieved at room temperature. Furthermore, the current-voltage characteristics, measured from 298 to 623 K for the first time, indicated that these MESFET's performed reasonably well throughout this temperature range. The maximum transconductance obtained was 1.6 mS/mm; the value of this parameter decreased with temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98416
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  • 9
    Electronic Resource
    Electronic Resource
    Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 740-742 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of spectroscopic studies on GaN based epitaxial materials on SiC substrates by metalorganic chemical vapor deposition. A variety of techniques has been used to study the optical properties of GaN epilayers and GaN/AlGaN heterostructures. Sharp spectral structures associated with the intrinsic free excitons were observed by photoluminescence and reflectance measurements from GaN based materials grown on SiC substrates. The residual strain was found to have a strong influence in determining the energies of exciton transitions. Picosecond relaxation studies of exciton decay dynamics suggest that an AlGaN cladding layer with a small mole fraction of AlN can be relatively effective in enhancing the radiative recombination rate for excitons by reducing the density of dislocations and suppressing surface recombination velocity in the GaN active layer for the GaN/AlGaN heterostructure samples. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117876
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  • 10
    Electronic Resource
    Electronic Resource
    Aluminum acceptor four particle bound exciton complex in 4H, 6H, and 3C SiC (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2953-2955 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New lines in the low temperature luminescence spectra of lightly aluminum doped p-type films of 3C, 6H, and 4H SiC are identified and associated with the recombination of a neutral aluminum acceptor four particle bound exciton complex.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109627
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