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  • 1
    Electronic Resource
    Electronic Resource
    Hydrogen in crystalline semiconductors (1987)
    Springer
    Applied physics 43 (1987), S. 153-195 
    Details
    ISSN: 1432-0630
    Keywords: 71.55.Fr ; 72.80.Ey
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A review of the properties of hydrogen in crystalline semiconductors is presented. The equilibrium lattice positions of the various states of hydrogen are detailed, together with the reactions of atomic hydrogen with shallow and deep level impurities that passivate their electrical activity. Evidence for several charge states of mobile hydrogen provides a consistent picture for both the temperature dependence of its diffusivity and the chemical reactions with shallow level dopants. The electrical and optical characteristics of hydrogen-related defects in both elemental and compound semiconductors are discussed, along with the surface damage caused by hydrogen bombardment. The bonding configurations of hydrogen on semiconductor surfaces and the prevalence of its incorporation during many benign processing steps are reviewed. We conclude by identifying the most important areas for future effort.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615975
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  • 2
    Electronic Resource
    Electronic Resource
    Investigation of the electrical degradation of silicon Schottky contacts due to mercury contamination (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2331-2332 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A micrographic investigation of the effect of mercury exposure on silicon substrates was conducted. Mercury was found to leave a residue on the silicon surface. A further study was conducted to determine the extent of electrical degradation of Si Schottky contacts due to the presence of a contaminant mercury residue between the metal and the semiconductor. It was concluded that such a layer caused uncertainties in subsequent resistivity measurements, higher capacitance-voltage (C-V) barrier heights, and observable leakage currents in current-voltage (I-V) plots taken from mercury-contaminated Si Schottky diodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102052
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  • 3
    Electronic Resource
    Electronic Resource
    Study of oxygen addition to CF3Br reactive ion etching plasmas: Effects on silicon surface chemistry and etching behavior (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2321-2323 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The etching of silicon in CF3Br/O2 plasmas has been examined. In situ x-ray photoelectron spectroscopy shows that silicon surfaces etched in CF3Br/O2 plasmas with a proportion of 30% O2 or less are covered with a reaction layer that is mainly due to bromine bonded to silicon. As the proportion of oxygen is increased above 30% the reaction layer becomes thicker and contains mainly fluorine and oxygen, and the silicon etch rate decreases simultaneously.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101115
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  • 4
    Electronic Resource
    Electronic Resource
    The gettering of copper by keV implantation of germanium into silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3012-3014 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gettering of copper by keV implantation of germanium into silicon is investigated. Germanium is implanted at a fixed energy with varying doses into the front side of silicon samples. Copper is thermally evaporated on the backside of the samples and then annealed at 900 °C for 1 h and 10 h, respectively, to allow in-diffusion of the transition metal. Rutherford backscattering spectroscopy, secondary-ion-mass spectroscopy, and cross-section transmission electron microscopy are used to demonstrate that gettering of copper is achieved through stacking faults created by heavy dose germanium implantation and solid-phase epitaxy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360050
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  • 5
    Electronic Resource
    Electronic Resource
    An in situ transmission electron microscopy study of electron-beam-induced amorphous-to-crystalline transformation of Al2O3 films on silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5272-5273 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An in situ transmission electron microscopy study of the amorphous-to-crystalline transformation of Al2O3 films on a silicon substrate has been carried out. It is found that a critical electron-beam dose rate is required for the transformation to be observed. The possible effect of the silicon substrate on the growth of the Al2O3 crystallites is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353757
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  • 6
    Electronic Resource
    Electronic Resource
    Defect states in carbon and oxygen implanted p-type silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 270-275 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The presence of electrically active defects in C+ and CO+ implanted boron-doped silicon has been monitored using deep level transient spectroscopy and resistivity measurements. Activation energies of trapped carriers, implanted ion dependencies, and annealing behavior of these defects have been determined. The introduction of defects by annealing has been observed. A total of ten hole and electron traps are reported. Among these traps, a dominant hole trap 0.65 eV above the valence band, and an electron trap 0.53 eV below the conduction band, are tentatively ascribed to the silicon di-interstitial and the carbon-oxygen pair, respectively. Other traps detected in the samples have been correlated with multi-oxygen- and carbon-related complexes. Annealing at temperatures up to 400 °C gives rise to similar deep level transient spectroscopy spectra comprising the same traps in both C+ and CO+ implanted material. However , annealing at temperatures 〉500 °C produces defect states that are dependent on the implanted ion species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345247
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  • 7
    Electronic Resource
    Electronic Resource
    Studies of implanted iron in silicon by channeling and Rutherford backscattering (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1336-1341 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Different amounts of 100-keV iron ions have been implanted into high-resistivity p-type FZ-silicon samples. The implantation damage, recovery of damage during various annealing periods and temperatures, movement of iron atoms under annealing and oxidation, and the kinds of defects created after implantation, annealing, or oxidation are all investigated by channeling and backscattering measurements. We have found that the critical fluence of 100-keV iron implanted into silicon at room temperature is ∼2.5×1014 Fe/cm2, and that iron atoms are gettered by silicon oxidation. In this supersaturated region iron atoms diffuse slightly towards bulk silicon during high-temperature annealing (≥1100 °C) but not at all during low-temperature annealing (≤1000 °C) in dry nitrogen ambient.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337306
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  • 8
    Electronic Resource
    Electronic Resource
    Iron-vacancy-oxygen complex in silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 324-326 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction between iron and defects produced by electron irradiation in iron-doped silicon has been observed by using deep-level transient spectroscopy. A new electron trap level due to the iron-vacancy-oxygen complex [Fe+(V⋅O)] was detected at Ec−0.36 eV. The role of the A center (V⋅O) in the formation of the complex was confirmed by the observation that during low-temperature annealing (〈150 °C) the increases in the concentration of the [Fe+(V⋅O)] complex was accompanied by an equal and opposite change in the concentration of the A center. Besides the interaction with the A center, iron was found to influence the annealing behavior of the divacancy and E center.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340297
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of deuterium plasmas on silicon near-surface properties (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3297-3300 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of reactive-ion etching and plasma etching (using deuterium) on the electrical properties of silicon have been studied employing capacitance-voltage measurements of Schottky diodes and secondary ion mass spectrometry. Both significant hydrogen penetration, which causes electrical deactivation of the boron dopant, and radiation damage result from the plasma exposure. A model is suggested to explain our results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342666
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  • 10
    Electronic Resource
    Electronic Resource
    Generation of divacancies in tin-doped silicon (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2257-2259 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Czochralski-grown tin-doped silicon samples have been irradiated by 2 MeV electrons at room temperature. The concentration of divacancies is studied as a function of bombardment dose, and as a function of temperature during a subsequent isochronal annealing. The results are compared with that for a control sample and the role of direct generation versus vacancy-vacancy pairing for divacancy formation is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98902
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