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  • 1
    Electronic Resource
    Electronic Resource
    Effect of Carbon Addition on the Microstructure and Properties of M3:2 High Speed Steels Processed by Powder Metallurgy (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 29-30 (Nov. 2007), p. 153-158 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: M3:2 high speed steels with and without carbon addition were prepared by using powdermetallurgy at sintering temperature between 1210 and 1280 °C. Densification, microstructure andmechanical properties of M3:2 high speed steels were investigated. Experimental results show thatwith 0.4wt% carbon addition, full density high speed steels were obtained at temperatures in therange 1240-1260 °C which is 40 °C lower than that of the undoped counterparts, leading to a sinteringwindow expanded by 10 to 20 °C. By the addition of 0.4wt% carbon, the sintered steels showattractive combinations of bend strength and hardness over those of M3:2 steels without carbonaddition. The results reveal that the addition of carbon will not only lower the sintering temperatureand oxygen content, but also improve the mechanical properties of the sintered steels
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/40/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.29-30.153.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Comparison between Charpy Transition Temperature T〈sub〉CVN〈/sub〉 and Reference Temperature T〈sub〉°〈/sub〉 for 10Ni3CrMoV Steel (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 539-543 (Mar. 2007), p. 4488-4493 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Charpy transition temperature TCVN and reference temperature To for 10Ni3CrMoVsteel were determined using two different experimental techniques such as Charpy V-notch impacttest technique and reference temperature To test technique. It was found that two methodsprovided different test results. The median master curve with upper and lower tolerance boundswas got from the test. The upper tolerance bound is often used for material design and application.At the same time the TCVN and To results were discussed for two kinds of heat treatment which areQT(Quenching and Temper) and QLT(Quenching, anneal and temper). JC (med ) K valuescalculated were 101 and 105MPam1/2 for the QT and QLT steels, respectively. These indicated thatthe QLT steels have the higher JC (med ) K , the lower reference temperature and lower energy (orfracture appearance) transition temperature(ETT50 or FATT50) than the QT steels. This was mainlyrelated with the different microstructures of two kinds of heat treatment
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/15/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.539-543.4488.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Ultrasonic communication in frogs (2006)
    [s.l.] : Nature Publishing Group
    Nature 440 (2006), S. 333-336 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Among vertebrates, only microchiropteran bats, cetaceans and some rodents are known to produce and detect ultrasounds (frequencies greater than 20 kHz) for the purpose of communication and/or echolocation, suggesting that this capacity might be restricted to mammals. Amphibians, reptiles ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature04416
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  • 4
    Electronic Resource
    Electronic Resource
    Intense visible light emission from fullerene-doped silica aerogel (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2801-2803 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report that fullerenes (C60/C70) can be uniformly encased in silica aerogel by sol-gel process together with supercritical drying technique. Intense visible light emission (2.26 eV) is observable with the naked eye from the composite under an Ar+ laser (488 nm) excitation at room temperature. The luminescent intensity is found to increase strongly with low doping of fullerenes (0.05 mol %) and then to decrease while the peak is red shifted, and finally quenched upon heavy doping (up to 2.5 mol %). This effect is consistent with the behavior of the fullerenes entrapped in the micropores linked by the silica networks resulting in the quantum confinement effect which then produce emission far above the interband gap of C60/C70. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358685
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  • 5
    Electronic Resource
    Electronic Resource
    Remote n-type modulation doping of InAs quantum wells by "deep acceptors'' in AlSb (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8313-8318 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Due to the fact that impurities normally change their doping characters when they undergo shallow to deep transitions or deep-to-false-valence transitions, a single defect, such as a cation on an Sb site, can explain all of the following facts for nonintentionally doped AlxGa1−xSb alloys and InAs/AlxGa1−xSb superlattices and quantum-well structures: (i) Bulk GaSb is p type; (ii) bulk AlSb is semi-insulating; (iii) InAs/AlSb superlattices with InAs quantum wells thicker than a critical thickness dc(x=1.0) are n type, where the InAs shallow–deep critical thickness function dc(x) is around (approximately-equal-to)100–(approximately-equal-to)150 A(ring) for 0.5〈x≤1.0 for InAs/AlxGa1−xSb superlattices; (iv) InAs/AlSb superlattices with InAs quantum wells thinner than dc(x=1.0) are semi-insulating. In addition, the theory predicts that Al0.5Ga0.5Sb and AlSb will be semi-insulating when nonintentionally doped, but can be converted to p type by the application of hydrostatic pressure P: P(approximately-greater-than)90 kbar and P(approximately-greater-than)150 kbar, respectively. These changes of doping character, which lie outside the conventional effective-mass theory, occur often in type-II band-alignment systems, such as InAs/AlxGa1−xSb.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353450
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  • 6
    Electronic Resource
    Electronic Resource
    Criteria for Si quantum-well luminescence (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8458-8462 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Criteria are developed for selecting a barrier material XY such that Si/XY superlattices should emit light from their Si quantum wells. GaAs is such a material for [001] superlattices. In many such superlattices, substitutional N on a Si site will be a shallow donor, not a deep trap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353419
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  • 7
    Electronic Resource
    Electronic Resource
    Doping effects in organic electroluminescent devices (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2105-2111 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several possible doping effects in organic electroluminescent devices are studied within the framework of the trap-charge limited conduction models. A significant increase in the trapped charges in the doped layer can cause an overall trap charge redistribution and a shift of the location of the recombination zone. Some experimental data are analyzed and their possible relevance to our predictions is discussed. An experimental verification scheme is also proposed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368271
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  • 8
    Electronic Resource
    Electronic Resource
    A model for cw laser induced mode-mismatched dual-beam thermal lens spectrometry based on probe beam profile image detection (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 700-708 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for cw laser induced mode-mismatched dual-beam thermal lens spectrometry using probe beam profile detection has been developed. This model exhibits the following behavior: after passing through the thermal lens the TEM00 Gaussian probe beam becomes the superposition of several Gaussian beams of different parameters. This model has a compact mathematical expression, for which experimental proofs are given. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360329
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  • 9
    Electronic Resource
    Electronic Resource
    Mechanisms of valley currents in InAs/AlSb/GaSb resonant interband tunneling diodes (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6220-6223 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several possible contributions to the valley currents in InAs/AlSb/GaSb resonant interband tunneling diodes are analyzed. A theoretical model proposes that the field-assisted thermionic hole emission is the main valley leakage mechanism at high temperature and the Fowler–Nordheim hole tunneling is the dominant leakage path at low temperature and high bias. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360568
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  • 10
    Electronic Resource
    Electronic Resource
    Three-dimensional model for cw laser-induced mode-mismatched dual-beam thermal lens spectrometry and time-resolved measurements of thin-film samples (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3738-3748 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conventional thermal lens spectrometry theory assumes that the sample is an infinite medium, and only the radial temperature rise and heat flow in the sample are considered. This approach is not suitable for thin-film samples. Considering the axial boundary conditions of the sample, a three-dimensional model for cw laser-induced mode-mismatched thermal lens spectrometry is presented. However, its mathematical expression is not so convenient as that of the conventional theory to deal with the experimental data. The model shows that, besides axial boundary conditions of the sample, the ratio of excitation laser spot size to the sample thickness ωe/l is a crucial parameter to minimize the axial heat flow. By choosing small ωe/l, it is possible for the conventional theory to describe the development of the thermal lens of a thin sample for a short duration. Experimental proofs for the theoretical prediction are made, and good agreements are achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356046
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