ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
To address the water mark issue from hydrophobic film drying, and the stringent particle removalrequirements for the 45nm technology node and beyond, we developed a cleaner with an innovativesingle wafer Marangoni dryer. The single wafer Marangoni dryer design features and processcharacterization data are presented in this paper. The major results can be summarized as: (1) Withthe immersion type Marangoni dryer, as the wafer is lifted out of a DIW bath, a stable and uniformmeniscus can be easily maintained, making the single-wafer Marangoni dryer ideal for dryinghydrophilic, hydrophobic or hydrophobic/hydrophilic mixed patterned wafers; (2) The newMarangoni dryer leaves ~14nm [1] water film on the wafer after drying, therefore any dissolved orsuspended materials contained inside the water film, and potentially left on the wafer surface afterwater evaporation, is less than 14nm in diameter. This feature is critical for the 45nm technologynode and beyond because 23nm particle could be killer defects at these nodes [2]; (3) Because of thestrong Marangoni flow effect, high aspect ratio features can be completely dried without leaving anywater droplets inside the trenches; therefore copper corrosion can be prevented; (4) The Marangonidryer uses N2 as the carrier gas, so when a wafer is lifted out of the degasified DIW bath through theN2/IPA spray zone, it is thoroughly dried in an oxygen-free environment before exposure to theambient environment; (5) The Marangoni dryer is free of electrostatic charge and centrifugal forcebecause of the slow (2mm/s~20mm/s) wafer linear lifting speed compared to linear speed at waferedge during SRD
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.134.337.pdf
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